SPP04N60C3 Todos los transistores

 ..1. Size:304K  infineon
 spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO

 ..2. Size:588K  infineon
 spp04n60c3 spa04n60c3.pdf

VDS Tjmax G FP G 3 2 1 P-TO220-3-31 G ;-3-111

 ..3. Size:248K  inchange semiconductor
 spp04n60c3.pdf

isc N-Channel MOSFET Transistor SPP04N60C3 ISPP04N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 6.1. Size:365K  infineon
 spp04n60s5.pdf

SPP04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 04N60S5 SPP04N60S5 PG-TO220 Q67040-S

 6.2. Size:247K  inchange semiconductor
 spp04n60s5.pdf

isc N-Channel MOSFET Transistor SPP04N60S5 ISPP04N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSOLUT

 8.1. Size:289K  1
 spa04n50c3 spb04n50c3 spp04n50c3.pdf

SPP04N50C3, SPB04N50C3 Final data SPA04N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance

 8.2. Size:445K  infineon
 spp04n80c3.pdf

SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 8.3. Size:247K  inchange semiconductor
 spp04n50c3.pdf

isc N-Channel MOSFET Transistor SPP04N50C3 ISPP04N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge Improved transcondutance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.4. Size:248K  inchange semiconductor
 spp04n80c3.pdf

isc N-Channel MOSFET Transistor SPP04N80C3 ISPP04N80C3 FEATURES Static drain-source on-resistance RDS(on) 1.3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO