SPP04N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPP04N80C3
   Código: 04N80C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SPP04N80C3

SPP04N80C3 Datasheet (PDF)

..1. Size:445K infineon
spp04n80c3.pdf

SPP04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3DS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

..2. Size:248K inchange semiconductor
spp04n80c3.pdf

isc N-Channel MOSFET Transistor SPP04N80C3ISPP04N80C3FEATURESStatic drain-source on-resistance:RDS(on) 1.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABSO

8.1. Size:289K 1
spa04n50c3 spb04n50c3 spp04n50c3.pdf

SPP04N50C3, SPB04N50C3Final dataSPA04N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance

8.2. Size:365K infineon
spp04n60s5.pdf

SPP04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking04N60S5SPP04N60S5 PG-TO220 Q67040-S

8.3. Size:304K infineon
spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO

8.4. Size:588K infineon
spp04n60c3 spa04n60c3.pdf

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

8.5. Size:247K inchange semiconductor
spp04n60s5.pdf

isc N-Channel MOSFET Transistor SPP04N60S5ISPP04N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

8.6. Size:248K inchange semiconductor
spp04n60c3.pdf

isc N-Channel MOSFET Transistor SPP04N60C3ISPP04N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

8.7. Size:247K inchange semiconductor
spp04n50c3.pdf

isc N-Channel MOSFET Transistor SPP04N50C3ISPP04N50C3FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeImproved transcondutanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: