SPP11N65C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP11N65C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SPP11N65C3
SPP11N65C3 Datasheet (PDF)
spp11n65c3 spa11n65c3 spi11n65c3 spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf
SPP11N65C3,SPA11N65C3SPI11N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPP11N65C3 PG-TO220 Q67
spp11n65c3.pdf
isc N-Channel MOSFET Transistor SPP11N65C3ISPP11N65C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
spp11n60cfd.pdf
SPP11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Package Ordering Cde MarkingSPP11N60CF
spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf
SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2
spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf
SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2
spp11n60s5 spi11n60s5 spp11n60s5 spi11n60s5 .pdf
SPP11N60S5SPI11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking11N60S5SPP11N60
spp11n60cfd.pdf
isc N-Channel MOSFET Transistor SPP11N60CFDISPP11N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.44Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)
spp11n60c3.pdf
isc N-Channel MOSFET Transistor SPP11N60C3ISPP11N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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