SPP15P10PG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP15P10PG

Código: 15P10P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 128 W

Tensión drenaje-fuente |Vds|: 100 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.1 V

Carga de compuerta (Qg): 37 nC

Tiempo de elevación (tr): 23 nS

Conductancia de drenaje-sustrato (Cd): 237 pF

Resistencia drenaje-fuente RDS(on): 0.24 Ohm

Paquete / Caja (carcasa): TO220

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SPP15P10PG Datasheet (PDF)

..1. spd15p10pg spp15p10pg.pdf Size:639K _1

SPP15P10P GSPD15P10P GSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPP15P10P G PG-TO220-3 15P10P Yes Non drySPD15P10P G PG-TO252-3 15P10P Yes N

5.1. spp15p10p spp15p10ph.pdf Size:824K _infineon

SPP15P10P HSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249_2_21 Qualified according to AEC Q101 Type Package Marking Lead free PackingSPP15P10PH PG-

5.2. spp15p10pl spp15p10plh.pdf Size:761K _infineon

SPP15P10PLH SIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.20DS(on),max Enhancement modeI -15 AD logic level Avalanche ratedPG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Marking Lead free PackingSPP15P10PL H PG-TO220-3

5.3. spp15p10p.pdf Size:243K _inchange_semiconductor

isc P-Channel MOSFET Transistor SPP15P10PISPP15P10PFEATURESStatic drain-source on-resistance:RDS(on)0.24Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and

Otros transistores... SPP11N60CFD , SPP11N60S5 , SPP11N65C3 , SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , MMIS60R580P , SPP15P10PLH , SPP16N50C3 , SPP17N80C3 , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 .

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