IRF1104L Todos los transistores

 

IRF1104L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF1104L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 114 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO262
 

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IRF1104L Datasheet (PDF)

 ..1. Size:208K  international rectifier
 irf1104l.pdf pdf_icon

IRF1104L

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

 7.1. Size:101K  international rectifier
 irf1104.pdf pdf_icon

IRF1104L

PD- 9.1724AIRF1104PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 100A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-

 7.2. Size:185K  international rectifier
 irf1104pbf.pdf pdf_icon

IRF1104L

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

 7.3. Size:208K  international rectifier
 irf1104s.pdf pdf_icon

IRF1104L

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

MOSTRAR MÁS

Otros transistores... IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL , IRLZ44N , IRF1104S , IRF1324 , IRF1324L , IRF1324S , IRF1324S-7P , IRF1404L , IRF1404S , IRF1404Z .

 

 
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