IRF1104L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1104L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 114 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO262

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IRF1104L datasheet

 ..1. Size:208K  international rectifier
 irf1104l.pdf pdf_icon

IRF1104L

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

 7.1. Size:101K  international rectifier
 irf1104.pdf pdf_icon

IRF1104L

PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 7.2. Size:185K  international rectifier
 irf1104pbf.pdf pdf_icon

IRF1104L

PD - 94967 IRF1104PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 100A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 7.3. Size:208K  international rectifier
 irf1104s.pdf pdf_icon

IRF1104L

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

MOSTRAR MÁS

Otros transistores... IRF1010EZL, IRF1010EZS, IRF1010Z, IRF1010ZL, IRF1010ZS, IRF1018E, IRF1018ES, IRF1018ESL, IRLZ44N, IRF1104S, IRF1324, IRF1324L, IRF1324S, IRF1324S-7P, IRF1404L, IRF1404S, IRF1404Z