IRF1407L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1407L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 890 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de IRF1407L MOSFET
IRF1407L Datasheet (PDF)
irf1407l.pdf

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
irf1407l.pdf

isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
irf1407.pdf

PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri
irf1407pbf.pdf

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs
Otros transistores... IRF1405L , IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1010E , IRF1407S , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S .
History: GSM6820 | ZXMS6006DGQ
History: GSM6820 | ZXMS6006DGQ



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