IRF2804 Todos los transistores

PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 2.3m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2804 IIRF2804 FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.5m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID

PD - 97057A IRF2804S-7PPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature l Fast Switching VDSS = 40V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G RDS(on) = 1.6m Description S This HEXFET Power MOSFET utilizes the latest ID = 160A S (Pin 2, 3 ,5,6,7) processing techniques to achieve extr

AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

isc N-Channel MOSFET Transistor IRF2804S DESCRIPTION Static drain-source on-resistance RDS(on) 6m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(