IRF2804 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF2804  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 330 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 280 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: TO220AB

  📄📄 Copiar 

 Búsqueda de reemplazo de IRF2804 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF2804 datasheet

 ..1. Size:569K  international rectifier
 irf2804.pdf pdf_icon

IRF2804

PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 2.3m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

 ..2. Size:408K  international rectifier
 irf2804pbf irf2804spbf irf2804lpbf.pdf pdf_icon

IRF2804

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 ..3. Size:408K  international rectifier
 irf2804lpbf irf2804pbf irf2804spbf.pdf pdf_icon

IRF2804

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 ..4. Size:246K  inchange semiconductor
 irf2804.pdf pdf_icon

IRF2804

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2804 IIRF2804 FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

MOSTRAR MÁS

Otros transistores... IRF1407S, IRF1503, IRF1503S, IRF1607, IRF1902, IRF2204, IRF2204L, IRF2204S, P55NF06, IRF2804L, IRF2804S, IRF2804S-7P, IRF2805, IRF2805L, IRF2805S, IRF2807Z, IRF2807ZL