IRF2805L Todos los transistores

 ..1. Size:331K  international rectifier
 irf2805spbf irf2805lpbf.pdf

PD - 95944A IRF2805SPbF IRF2805LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 4.7m l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 135A S l Lead-Free Description This HEXFET Power MOSFET utilizes the lates

 ..2. Size:331K  international rectifier
 irf2805lpbf irf2805spbf.pdf

PD - 95944A IRF2805SPbF IRF2805LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 4.7m l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 135A S l Lead-Free Description This HEXFET Power MOSFET utilizes the lates

 0.1. Size:270K  international rectifier
 auirf2805l auirf2805s.pdf

PD - 96383A AUTOMOTIVE GRADE AUIRF2805S AUIRF2805L HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 4.7m 175 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Sp

 7.1. Size:151K  international rectifier
 irf2805.pdf

PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175 C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed

 7.2. Size:264K  international rectifier
 irf2805pbf.pdf

PD - 95493A IRF2805PbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive D VDSS = 55V Features l Advanced Process Technology RDS(on) = 4.7m G l Ultra Low On-Resistance l 175 C Operating Temperature ID = 75A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET utilizes the latest processing tech

 7.3. Size:229K  international rectifier
 auirf2805.pdf

PD - 97690A AUTOMOTIVE GRADE AUIRF2805 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l 175 C Operating Temperature D V(BR)DSS 55V l Fast Switching RDS(on) typ. 3.9m l Fully Avalanche Rated max 4.7m l Repetitive Avalanche Allowed G up to Tjmax ID (Silicon Limited) 175A l Lead-Free, RoHS Compliant S ID (Package Limited) 75A l Autom

 7.4. Size:252K  inchange semiconductor
 irf2805s.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2805S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 7.5. Size:245K  inchange semiconductor
 irf2805.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2805 IIRF2805 FEATURES Static drain-source on-resistance RDS(on) 4.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R