IRF2805S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF2805S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 135 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm

Encapsulados: TO263

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IRF2805S datasheet

 ..1. Size:331K  international rectifier
irf2805spbf irf2805lpbf.pdf pdf_icon

IRF2805S

PD - 95944A IRF2805SPbF IRF2805LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 4.7m l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 135A S l Lead-Free Description This HEXFET Power MOSFET utilizes the lates

 ..2. Size:331K  international rectifier
irf2805lpbf irf2805spbf.pdf pdf_icon

IRF2805S

PD - 95944A IRF2805SPbF IRF2805LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 4.7m l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 135A S l Lead-Free Description This HEXFET Power MOSFET utilizes the lates

 ..3. Size:252K  inchange semiconductor
irf2805s.pdf pdf_icon

IRF2805S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2805S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 0.1. Size:270K  international rectifier
auirf2805l auirf2805s.pdf pdf_icon

IRF2805S

PD - 96383A AUTOMOTIVE GRADE AUIRF2805S AUIRF2805L HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 4.7m 175 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Sp

Otros transistores... IRF2204L, IRF2204S, IRF2804, IRF2804L, IRF2804S, IRF2804S-7P, IRF2805, IRF2805L, IRFB3607, IRF2807Z, IRF2807ZL, IRF2807ZS, IRF2903Z, IRF2903ZL, IRF2903ZS, IRF2907Z, IRF2907ZL