IRF2807Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF2807Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 170 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 89 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 79 nS
Cossⓘ - Capacitancia de salida: 420 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRF2807Z MOSFET
- Selecciónⓘ de transistores por parámetros
IRF2807Z datasheet
..1. Size:399K international rectifier
irf2807zpbf irf2807zspbf irf2807zlpbf.pdf 
PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techni
..2. Size:173K international rectifier
irf2807z.pdf
PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes th
..3. Size:399K international rectifier
irf2807zlpbf irf2807zpbf irf2807zspbf.pdf
PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4m G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techni
..4. Size:246K inchange semiconductor
irf2807z.pdf
isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSO
0.1. Size:256K inchange semiconductor
irf2807zl.pdf
Isc N-Channel MOSFET Transistor IRF2807ZL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75
0.2. Size:258K inchange semiconductor
irf2807zs.pdf
Isc N-Channel MOSFET Transistor IRF2807ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
7.1. Size:272K international rectifier
irf2807spbf irf2807lpbf.pdf
PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175 C Operating Temperature l Fast Switching RDS(on) = 13m l Fully Avalanche Rated G l Lead-Free ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques
7.2. Size:272K international rectifier
irf2807lpbf irf2807spbf.pdf
PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175 C Operating Temperature l Fast Switching RDS(on) = 13m l Fully Avalanche Rated G l Lead-Free ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques
7.3. Size:233K international rectifier
irf2807pbf.pdf
PD - 94970A IRF2807PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 75V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 13m l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex
7.4. Size:124K international rectifier
irf2807s.pdf
PD - 94170 IRF2807S IRF2807L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 13m Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o
7.5. Size:207K international rectifier
irf2807.pdf
PD - 91517 IRF2807 HEXFET Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 13m G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
7.6. Size:196K international rectifier
auirf2807.pdf
PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET Power MOSFET Features V(BR)DSS 75V l Advanced Planar Technology D l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 13m l 175 C Operating Temperature l Fast Switching G ID(Silicon Limited) 82A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 75A l Lead-Free, RoHS Compliant l Au
7.7. Size:258K inchange semiconductor
irf2807s.pdf
Isc N-Channel MOSFET Transistor IRF2807S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
7.8. Size:245K inchange semiconductor
irf2807.pdf
isc N-Channel MOSFET Transistor IRF2807 IIRF2807 FEATURES Static drain-source on-resistance RDS(on) 13m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
7.9. Size:256K inchange semiconductor
irf2807l.pdf
Isc N-Channel MOSFET Transistor IRF2807L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75
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