IRF2907Z Todos los transistores

 ..1. Size:420K  international rectifier
 irf2907zpbf irf2907zspbf irf2907zlpbf.pdf

PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 160A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie

 ..2. Size:420K  international rectifier
 irf2907zlpbf irf2907zpbf irf2907zspbf.pdf

PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 75V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 160A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie

 ..3. Size:246K  inchange semiconductor
 irf2907z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2907Z IIRF2907Z FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 0.1. Size:293K  international rectifier
 auirf2907zs-7p.pdf

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m l 175 C Operating Temperature G l Fast Switching max. 3.8m S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot

 0.2. Size:295K  international rectifier
 irf2907zs-7ppbf.pdf

PD - 97031D IRF2907ZS-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.8m G Description S ID = 160A This HEXFET Power MOSFET utilizes the latest S (Pin 2, 3, 5, 6, 7) processing techniques and advanced packaging G (

 0.3. Size:287K  international rectifier
 auirf2907z.pdf

PD - 97545 AUTOMOTIVE GRADE AUIRF2907Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 75V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 4.5m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 170A Tjmax S ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *

 0.4. Size:293K  international rectifier
 auirf2907zs7ptl.pdf

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m l 175 C Operating Temperature G l Fast Switching max. 3.8m S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot

 0.5. Size:258K  inchange semiconductor
 irf2907zs.pdf

Isc N-Channel MOSFET Transistor IRF2907ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol