IRF3205ZL Todos los transistores

 

IRF3205ZL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3205ZL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 95 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO262
 

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IRF3205ZL Datasheet (PDF)

 ..1. Size:379K  international rectifier
irf3205zpbf irf3205zlpbf irf3205zspbf.pdf pdf_icon

IRF3205ZL

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 ..2. Size:303K  international rectifier
irf3205z irf3205zs irf3205zl.pdf pdf_icon

IRF3205ZL

PD - 94653BIRF3205ZAUTOMOTIVE MOSFETIRF3205ZSIRF3205ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOS

 ..3. Size:379K  international rectifier
irf3205zpbf irf3205zspbf irf3205zlpbf.pdf pdf_icon

IRF3205ZL

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 6.1. Size:330K  international rectifier
auirf3205zstrl.pdf pdf_icon

IRF3205ZL

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Li

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History: APM9988QA | 2SK3755 | NCE6890D | BRFL4N65S | 2SJ190 | PP9H06BD | NVD5807N

 

 
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