IRF3515L Todos los transistores

 

IRF3515L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3515L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 107 nC
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO262

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IRF3515L Datasheet (PDF)

 ..1. Size:126K  international rectifier
irf3515l.pdf

IRF3515L
IRF3515L

PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

 7.1. Size:126K  international rectifier
irf3515s.pdf

IRF3515L
IRF3515L

PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

 8.1. Size:216K  samsung
irf350 irf351 irf352 irf353.pdf

IRF3515L
IRF3515L

 9.1. Size:144K  international rectifier
2n6768 irf350.pdf

IRF3515L
IRF3515L

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 9.2. Size:674K  international rectifier
irf3546m.pdf

IRF3515L
IRF3515L

60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block co-FEATURES packages two pairs of high performance control and synchronous MOSFETs and is ideal for use in high- Peak efficiency up to 94% at 1.2V density two-phase synchronous buck converters. It is Two pairs of control and synchronous optimized internally for PCB layout, heat transfer and

 9.3. Size:223K  international rectifier
auirf3504.pdf

IRF3515L
IRF3515L

PD - 97696AAUTOMOTIVE GRADEAUIRF3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Rated G max 9.2ml Repetitive Avalanche AllowedSID87Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically des

 9.4. Size:341K  st
irf350.pdf

IRF3515L
IRF3515L

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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