IRF3704ZL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF3704ZL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.55 V
   Qgⓘ - Carga de la puerta: 8.7 nC
   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
   Paquete / Cubierta: TO262

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IRF3704ZL Datasheet (PDF)

..1. Size:360K international rectifier
irf3704zlpbf irf3704zpbf irf3704zspbf.pdf

PD - 95463IRF3704ZPbFIRF3704ZSPbFIRF3704ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3704ZIRF3704ZS IRF3704ZLAbso

6.1. Size:352K international rectifier
irf3704zcspbf.pdf

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

6.2. Size:352K international rectifier
irf3704zclpbf.pdf

6.3. Size:246K inchange semiconductor
irf3704z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZIIRF3704ZFEATURESLow drain-source on-resistance:RDS(on) 7.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA

6.4. Size:258K inchange semiconductor
irf3704zs.pdf

Isc N-Channel MOSFET Transistor IRF3704ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

6.5. Size:252K inchange semiconductor
irf3704zcs.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZCSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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