IRF3707ZCL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF3707ZCL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 59 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.25 V
   Qgⓘ - Carga de la puerta: 9.7 nC
   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO262

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IRF3707ZCL Datasheet (PDF)

..1. Size:351K international rectifier
irf3707zclpbf irf3707zcspbf.pdf

PD - 95464AIRF3707ZCSPbFIRF3707ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3707ZCSPbFIRF3707ZCLPbFAbsolute Maximum RatingsP

6.1. Size:376K international rectifier
irf3707zlpbf irf3707zpbf irf3707zspbf.pdf

PD - 95333AIRF3707ZPbFIRF3707ZSPbFIRF3707ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF

6.2. Size:407K international rectifier
irf3707z irf3707zs irf3707zl.pdf

PD - 95812AIRF3707ZIRF3707ZSIRF3707ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 9.5m: 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3707ZIRF3707ZS IRF3707ZLAbsolute Maximum Ratings

6.3. Size:244K inchange semiconductor
irf3707zs.pdf

isc N-Channel MOSFET Transistor IRF3707ZSDESCRIPTIONDrain Current :I = 59A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL

6.4. Size:246K inchange semiconductor
irf3707z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3707Z IIRF3707ZFEATURESLow drain-source on-resistance:RDS(on) 9.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

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