IRF3709 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3709
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 171 nS
Cossⓘ - Capacitancia de salida: 1064 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRF3709 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF3709 datasheet
..1. Size:231K international rectifier
irf3709pbf irf3709spbf irf3709lpbf.pdf 
PD - 95495 IRF3709PbF SMPS MOSFET IRF3709SPbF IRF3709LPBF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive
..2. Size:231K international rectifier
irf3709lpbf irf3709pbf irf3709spbf.pdf
PD - 95495 IRF3709PbF SMPS MOSFET IRF3709SPbF IRF3709LPBF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive
..3. Size:121K international rectifier
irf3709.pdf
PD - 94071 IRF3709 SMPS MOSFET IRF3709S IRF3709L Applications HEXFET Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-
..4. Size:121K international rectifier
irf3709 irf3709s irf3709l.pdf
PD - 94071 IRF3709 SMPS MOSFET IRF3709S IRF3709L Applications HEXFET Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-
..5. Size:246K inchange semiconductor
irf3709.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3709 IIRF3709 FEATURES Low drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RAT
0.1. Size:337K international rectifier
irf3709z irf3709zl irf3709zs.pdf
PD - 95835 IRF3709Z IRF3709ZS IRF3709ZL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum Ratings Parameter M
0.2. Size:312K international rectifier
irf3709zcs.pdf
PD - 95836 IRF3709ZCS IRF3709ZCL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3709ZCS IRF3709ZCL Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-S
0.3. Size:377K international rectifier
irf3709zlpbf irf3709zpbf irf3709zspbf.pdf
PD -95465 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum
0.4. Size:377K international rectifier
irf3709zpbf irf3709zspbf irf3709zlpbf.pdf
PD -95465 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum
0.5. Size:312K international rectifier
irf3709zcl.pdf
PD - 95836 IRF3709ZCS IRF3709ZCL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3709ZCS IRF3709ZCL Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-S
0.6. Size:361K international rectifier
irf3709zclpbf.pdf
PD - 95529 IRF3709ZCSPbF IRF3709ZCLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3709ZCS IRF3709ZCL Absolute Maximum Ratings Parameter Max. Uni
0.7. Size:271K inchange semiconductor
irf3709zcs.pdf
isc N-Channel MOSFET Transistor IRF3709ZCS DESCRIPTION Static drain-source on-resistance RDS(on) 6.3m @V = 10V GS Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM
0.8. Size:248K inchange semiconductor
irf3709zs.pdf
isc N-Channel MOSFET Transistor IRF3709ZS DESCRIPTION Static drain-source on-resistance RDS(on) 6.3m @V = 10V GS Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM
0.9. Size:243K inchange semiconductor
irf3709s.pdf
isc N-Channel MOSFET Transistor IRF3709S DESCRIPTION Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL A
0.10. Size:247K inchange semiconductor
irf3709z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3709Z IIRF3709Z FEATURES Low drain-source on-resistance RDS(on) 6.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R
Otros transistores... IRF3704ZS, IRF3707Z, IRF3707ZCL, IRF3707ZCS, IRF3707ZL, IRF3707ZS, IRF3708, IRF3708S, STP65NF06, IRF3709L, IRF3709S, IRF3709Z, IRF3709ZCS, IRF3709ZL, IRF3709ZS, IRF3710Z, IRF3710ZG
