IRF3710ZL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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IRF3710ZL Datasheet (PDF)

1.1. irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Size:382K _international_rectifier

PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18mΩ G Description ID = 59A This HEXFET® Power MOSFET utilizes the latest S processing techn

2.1. irf3710z.pdf Size:172K _international_rectifier

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET� Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m? 175�C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET� Power MOSFET utilizes the latest

 3.1. irf3710a.pdf Size:321K _international_rectifier

RoHS IRF3710 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) DESCRIPTION The Nell IRF3710 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

3.2. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier

PD - 95108A IRF3710SPbF IRF3710LPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 23mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

 3.3. irf3710.pdf Size:94K _international_rectifier

PD - 91309A IRF3710 HEXFET� Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 23m? G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.4. irf3710pbf.pdf Size:218K _international_rectifier

PD - 94954D IRF3710PbF HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 23mΩ G l Fast Switching l Fully Avalanche Rated ID = 57A l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre

 3.5. irf3710s.pdf Size:184K _international_rectifier

PD -91310C IRF3710S/L HEXFET� Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175�C Operating Temperature RDS(on) = 0.025? Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

3.6. irf3710.pdf Size:274K _first_silicon

SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Symbol Rating Unit 1.Gate 2.Drain

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