IRF4104G Todos los transistores

 7.1. Size:277K  international rectifier
 irf4104l.pdf

PD - 94639A IRF4104 AUTOMOTIVE MOSFET IRF4104S IRF4104L Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 5.5m G Description ID = 75A Specifically designed for Automotive applications, S this HEXFET Power MOSFET

 7.2. Size:376K  international rectifier
 irf4104lpbf irf4104pbf irf4104spbf.pdf

PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 5.5m Lead-Free G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 7.3. Size:376K  international rectifier
 irf4104pbf irf4104spbf irf4104lpbf.pdf

PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 5.5m Lead-Free G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 7.4. Size:349K  international rectifier
 auirf4104strl.pdf

PD - 97471A AUTOMOTIVE GRADE AUIRF4104 AUIRF4104S Features Low On-Resistance HEXFET Power MOSFET Dynamic dV/dT Rating 175 C Operating Temperature D V(BR)DSS 40V Fast Switching RDS(on) typ. 4.3m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5m G Lead-Free, RoHS Compliant ID (Silicon Limited) 120A Automotive Qualified * S ID (Package Li

 7.5. Size:703K  infineon
 auirf4104 auirf4104s.pdf

AUIRF4104 AUTOMOTIVE GRADE AUIRF4104S Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 4.3m 175 C Operating Temperature Fast Switching max. 5.5m Fully Avalanche Rated ID (Silicon Limited) 120A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A L

 7.6. Size:258K  inchange semiconductor
 irf4104s.pdf

Isc N-Channel MOSFET Transistor IRF4104S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.7. Size:245K  inchange semiconductor
 irf4104.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF4104 IIRF4104 FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R