IRF5801 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD-94044IRF5801SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 200V 2.2 0.6ABenefitsA Low Gate to Drain Charge to Reduce1 6D DSwitching Losses Fully Characterized Capacitance Including 25DDEffective COSS to Simplify Design, (SeeApp. Note AN1001)3 4G S Fully Characterized Avalanche

PD-95474BIRF5801PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 200V 2.2W 0.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand Currentl Lead-FreeTSOP-6l Hal

IRF5801PbF-1HEXFET Power MOSFETVDS 200 VRDS(on) max D 1 6 D2.20 (@V = 10V)GSD 2 5 DQg (typical) 3.9 nCID 0.6 AG 3 4 S(@T = 25C)ATSOP-6Features BenefitsIndustry-standard pinout TSOP-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1,

PD- 94016IRF5803D2TMFETKY MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -40V2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET3 6RDS(on) = 112mS D Low VF Schottky Rectifier45G D SO-8 Footprint Schottky Vf = 0.51VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXFETs andSchottky

PD - 93997IRF5806HEXFET Power MOSFET Trench TechnologyVDSS RDS(on) max ID Ultra Low On-Resistance -20V 86m@VGS = -4.5V -4.0A P-Channel MOSFET147m@VGS = -2.5V -3.0A Available in Tape & ReelDescriptionA1 6New trench HEXFET Power MOSFETs fromD DInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance25DD

PD-94015IRF5803HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 112@VGS = -10V -3.4A Surface Mount 190@VGS = -4.5V -2.7A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel HEXFET Power MOSFETs from A1 6D DInternational Rectifier utilize advanced processingtechniques to achieve t

PD -95340AIRF5805PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Surface Mount -30V 0.098@VGS = -10V -3.8Al Available in Tape & Reel0.165@VGS = -4.5V -3.0Al Low Gate Chargel Lead-Freel Halogen-FreeDescriptionA1 6These P-channel MOSFETs from International Rectifier D Dutilize advanced processing techniques to achieve the

PD- 94086IRF5802SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters150V 1.2@VGS = 10V 0.9ABenefits Low Gate to Drain Charge to ReduceSwitching LossesD 1 6 D Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeD 2 5 DApp. Note AN1001) Fully Characterized Avalanche Voltag

PD -94029IRF5805HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 0.098@VGS = -10V -3.8A Surface Mount0.165@VGS = -4.5V -3.0A Available in Tape & Reel Low Gate ChargeDescriptionA1 6These P-channel MOSFETs from International Rectifier D Dutilize advanced processing techniques to achieve the2extremely low on-resistance per sil

PD- 95160AIRF5803D2PbFTMFETKY MOSFET & Schottky Diodel Co-packaged HEXFET PowerMOSFET and Schottky Diode1 8A Kl Ideal For Buck Regulator ApplicationsVDSS = -40V2 7A Kl P-Channel HEXFETl Low VF Schottky Rectifier3 6RDS(on) = 112mS Dl SO-8 Footprint45G Dl Lead-Free Schottky Vf = 0.51VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXF

PD - 94333BIRF5804HEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 198@VGS = -10V -2.5Al Surface Mount 334@VGS = -4.5V -2.0Al Available in Tape & Reell Low Gate ChargeDescriptionThese P-channel HEXFET Power MOSFETs from A1 6D DInternational Rectifier utilize advanced processingtechniques to achieve the extremely low o

PD - 93850AIRF5800HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6D Dl P-Channel MOSFETVDSS = -30Vl Surface Mount25DDl Available in Tape & Reell Low Gate Charge34G SRDS(on) = 0.085Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon

PD - 95476BIRF5806PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Surface Mount -20V 86m@VGS = -4.5V -4.0Al Available in Tape & Reel147m@VGS = -2.5V -3.0Al Low Gate Chargel Lead-Freel Halogen-FreeDescriptionA1 6These P-channel MOSFETs from International Rectifier D Dutilize advanced processing techniques to achieve

IRF5803PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET VDSS RDS(on) (max) ID Surface Mount 112m@ VGS = -10V -3.4A Available in Tape & Reel - 40V Low Gate Charge 190m@ VGS = -4.5V -2.7A Lead-Free Halogen-Free A1 6D DDescription These P-channel HEXFET Power MOSFETs from International 25DDR

PD- 95475BIRF5802PbFSMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 1.2W@VGS = 10V 0.9ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand Currentl Lead-FreeTSO

IRF5803TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

IRF5805TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

IRF5802TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS