IRF630NS Todos los transistores

 

IRF630NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF630NS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 82 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 89 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de IRF630NS MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRF630NS Datasheet (PDF)

 ..1. Size:335K  international rectifier
irf630npbf irf630nspbf irf630nlpbf.pdf pdf_icon

IRF630NS

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

 ..2. Size:335K  international rectifier
irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf pdf_icon

IRF630NS

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

 ..3. Size:229K  inchange semiconductor
irf630ns.pdf pdf_icon

IRF630NS

Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 0.1. Size:232K  inchange semiconductor
irf630nstrrpbf.pdf pdf_icon

IRF630NS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de

Otros transistores... IRF540Z , IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF6201 , IRF630N , IRF630NL , IRF640N , IRF640N , IRF640NL , IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 .

History: NTB52N10G | IXFK150N15P | IXFH88N20Q | IRLU014N | SSF8205U | P3606NEA | JCS13AN50BC

 

 
Back to Top

 


 
.