IRF630NS Todos los transistores

 ..1. Size:335K  international rectifier
 irf630npbf irf630nspbf irf630nlpbf.pdf

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30 G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rec

 ..2. Size:335K  international rectifier
 irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30 G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rec

 ..3. Size:229K  inchange semiconductor
 irf630ns.pdf

Isc N-Channel MOSFET Transistor IRF630NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.1. Size:232K  inchange semiconductor
 irf630nstrrpbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630NSTRRPBF DESCRIPTION Drain Current I =9.3A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This de

 7.1. Size:155K  international rectifier
 irf630n.pdf

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30 Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced proces

 7.2. Size:244K  inchange semiconductor
 irf630nl.pdf

Isc N-Channel MOSFET Transistor IRF630NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 7.3. Size:245K  inchange semiconductor
 irf630n.pdf

isc N-Channel MOSFET Transistor IRF630N IIRF630N FEATURES Static drain-source on-resistance RDS(on) 0.3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T