IRF6613 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95881BIRF6613HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for Synchronous Rectification in Isolated VDSS RDS(on) max Qg(typ.)DC-DC Converters3.4m@VGS = 10V40V 42nCl Low Conduction Losses4.1m@VGS = 4.5Vl Low Switching Lossesl Low Profile (

PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (

PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low

PD - 96917BIRF6619DirectFET Power MOSFET Typical values (unless otherwise specified)l Low Profile (

PD - 95842IRF6612/IRF6612TR1HEXFET Power MOSFETVDSS RDS(on) max Qg(typ.)l Application Specific MOSFETs 30V 3.3m@VGS = 10V 30nC4.4m@VGS = 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction Lossesl Low Switching Lossesl Low Profile (

PD - 96978EIRF6611DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

PD - 95847IRF6617HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses30V 8.1m@VGS = 10V 11nCl Low Switching Losses10.3m@VGS = 4.5Vl Low Profile (

PD - 97240AIRF6618PbFIRF6618TRPbFl RoHs Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs30V max 20V max 2.2m@ 10V 3.4m@ 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity43nC 15nC 4.0nC 46nC 28nC 1.64Vl

PD - 94726CIRF6618/IRF6618TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs30V 2.2m@VGS = 10V 43 nCl Ideal for CPU Core DC-DC Converters3.4m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (

PD -96907BIRF6614DirectFET Power MOSFET Typical values (unless otherwise specified)l Application Specific MOSFETsVDSS VGS RDS(on) RDS(on) l Lead and Bromide Free 40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Low Profile (