BF908 Todos los transistores

 ..1. Size:60K  philips
 bf908 bf908r 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES High forward transfer admittance handbook, halfpage d 4 3 Short channel transistor with high forward transfer adm

 ..2. Size:87K  philips
 bf908 bf908r 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES High forward transfer admittance handbook, halfpage d 4 3 Short channel transistor with high forward transfer adm

 0.1. Size:69K  philips
 bf908wr 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET 1995 Apr 25 Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward t

 0.2. Size:258K  philips
 bf908-r n.pdf

BF908; BF908R Dual-gate MOS-FETs Rev. 03 14 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http

 0.3. Size:206K  philips
 bf908wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d dr

 0.4. Size:103K  philips
 bf908wr 0.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET 1995 Apr 25 Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward t