BF908 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF908
Código: M26
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.2 W
Voltaje máximo drenador - fuente |Vds|: 12 V
Corriente continua de drenaje |Id|: 0.04 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 3.1 pF
Resistencia entre drenaje y fuente RDS(on): 100 Ohm
Paquete / Cubierta: SOT143
Búsqueda de reemplazo de MOSFET BF908
BF908 Datasheet (PDF)
bf908 bf908r 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF908; BF908RDual-gate MOS-FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationDual-gate MOS-FETs BF908; BF908RFEATURES High forward transfer admittancehandbook, halfpaged4 3 Short channel transistor with high forward transferadm
bf908 bf908r 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF908; BF908RDual-gate MOS-FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationDual-gate MOS-FETs BF908; BF908RFEATURES High forward transfer admittancehandbook, halfpaged4 3 Short channel transistor with high forward transferadm
bf908wr 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF908WRN-channel dual-gate MOS-FET1995 Apr 25Preliminary specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t
bf908-r n.pdf
BF908; BF908RDual-gate MOS-FETsRev. 03 14 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http
bf908wr.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF908WRN-channel dual-gate MOS-FETPreliminary specification 1995 Apr 25NXP Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d dr
bf908wr 0.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF908WRN-channel dual-gate MOS-FET1995 Apr 25Preliminary specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t
Otros transistores... BF900 , BF901 , BF901R , BF904 , BF904A , BF904R , BF904WR , BF905 , IRFZ24N , BF908R , BF908WR , BF909 , BF909A , BF909R , BF909WR , BF910 , BF960 .
