BF908 Todos los transistores

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BF908 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF908

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 12 V

Corriente continua de drenaje (Id): 0.04 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 3.1 pF

Resistencia drenaje-fuente RDS(on): 100 Ohm

Empaquetado / Estuche: SOT143

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BF908 Datasheet (PDF)

1.1. bf908 bf908r 1.pdf Size:87K _philips

BF908
BF908

DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES High forward transfer admittance handbook, halfpage d 4 3 Short channel transistor with high forward transfer admittance

1.2. bf908-r n.pdf Size:258K _philips

BF908
BF908

BF908; BF908R Dual-gate MOS-FETs Rev. 03 14 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://ww

1.3. bf908wr 0.pdf Size:103K _philips

BF908
BF908

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET 1995 Apr 25 Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer

1.4. bf908 bf908r 2.pdf Size:60K _philips

BF908
BF908

DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES High forward transfer admittance handbook, halfpage d 4 3 Short channel transistor with high forward transfer admittance

1.5. bf908wr 1.pdf Size:69K _philips

BF908
BF908

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET 1995 Apr 25 Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer

1.6. bf908wr.pdf Size:206K _philips

BF908
BF908

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING ? High forward transfer admittance PIN SYMBOL DESCRIPTION ? Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain ?

Otros transistores... BF900 , BF901 , BF901R , BF904 , BF904A , BF904R , BF904WR , BF905 , IRF5210 , BF908R , BF908WR , BF909 , BF909A , BF909R , BF909WR , BF910 , BF960 .

 


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Introduzca al menos 1 números o letras