BF908R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BF908R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 3.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
   Paquete / Cubierta: SOT143R

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BF908R Datasheet (PDF)

..1. Size:60K philips
bf908 bf908r 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF908; BF908RDual-gate MOS-FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationDual-gate MOS-FETs BF908; BF908RFEATURES High forward transfer admittancehandbook, halfpaged4 3 Short channel transistor with high forward transferadm

..2. Size:87K philips
bf908 bf908r 1.pdf

9.1. Size:69K philips
bf908wr 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF908WRN-channel dual-gate MOS-FET1995 Apr 25Preliminary specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t

9.2. Size:258K philips
bf908-r n.pdf

BF908; BF908RDual-gate MOS-FETsRev. 03 14 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http

9.3. Size:206K philips
bf908wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF908WRN-channel dual-gate MOS-FETPreliminary specification 1995 Apr 25NXP Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d dr

9.4. Size:103K philips
bf908wr 0.pdf

Otros transistores... BF901 , BF901R , BF904 , BF904A , BF904R , BF904WR , BF905 , BF908 , SKD502T , BF908WR , BF909 , BF909A , BF909R , BF909WR , BF910 , BF960 , BF960S .

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