IRF6716M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF6716M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 1340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: DIRECTFET

Búsqueda de reemplazo de MOSFET IRF6716M

IRF6716M Datasheet (PDF)

..1. Size:274K international rectifier
irf6716m.pdf

PD - 97274CIRF6716MPbFIRF6716MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

8.1. Size:302K international rectifier
irf6711spbf.pdf

PD - 96280IRF6711SPbFIRF6711STRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

8.2. Size:256K international rectifier
irf6714mpbf.pdf

PD - 96130AIRF6714MPbFIRF6714MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant and Halogen Free l Low Profile (

8.3. Size:218K international rectifier
irf6717mpbf.pdf

PD - 97345CIRF6717MPbFIRF6717MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant and Halgen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

8.4. Size:241K international rectifier
irf6712spbf.pdf

IRF6712SPbFIRF6712STRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

8.5. Size:231K international rectifier
irf6718l2.pdf

PD - 97395EIRF6718L2TRPbFIRF6718L2TR1PbFDirectFET Power MOSFET l RoHS Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Dual Sided Cooling Compatible VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance25V max 20V max 0.50m@10V 1.0m@4.5Vl Very Low RDS(ON) for Reduced Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l O

8.6. Size:311K international rectifier
irf6710s2trpbf.pdf

PD - 97124DIRF6710S2TRPbFIRF6710S2TR1PbFDirectFET Power MOSFET l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified)l Low Profile (

8.7. Size:229K international rectifier
irf6713spbf.pdf

PD - 96129AIRF6713SPbFIRF6713STRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

8.8. Size:276K infineon
irf6715mpbf irf6715mtrpbf.pdf

PD - 96117CIRF6715MPbFIRF6715MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

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