IRF7470 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 93913CIRF7470SMPS MOSFETApplications HEXFET Power MOSFET High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10ABenefits Ultra-Low Gate ImpedanceAA Very Low RDS(on) at 4.5V VGS1 8S D2 7 Fully Characterized Avalanche VoltageS Dand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum RatingsSymbol Paramet

PD- 95276IRF7470PbFSMPS MOSFETApplications HEXFET Power MOSFETl High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10Al Lead-FreeBenefitsl Ultra-Low Gate ImpedanceAA1 8l Very Low RDS(on) at 4.5V VGSS D2 7S Dl Fully Characterized Avalanche Voltageand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum Rati

PD- 95276IRF7470PbFSMPS MOSFETApplications HEXFET Power MOSFETl High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10Al Lead-FreeBenefitsl Ultra-Low Gate ImpedanceAA1 8l Very Low RDS(on) at 4.5V VGSS D2 7S Dl Fully Characterized Avalanche Voltageand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum Rati

IRF7470TRPBF&-10www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous

PD - 94311IRF7476HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency 3.3V and 5V input Point-12V 8.0m@VGS = 4.5V 15Aof-Load Synchronous Buck Converters forNetcom and Computing Applications. Power Management for Netcom,AAComputing and Portable Applications.1 8S D2 7S DBenefits3 6S D Ultra-Low Gate Impedance4 5G D

PD- 95559IRF7473PbFHEXFET Power MOSFETApplicationsl Telecom and Data-Com 24 and 48VVDSS RDS(on) max IDinput DC-DC convertersl Motor Control100V 26mW@VGS = 10V 6.9Al Uninterrutible Power Supplyl Lead-FreeBenefitsl Ultra Low On-ResistanceAA1 8l High Speed Switching S Dl Low Gate Drive Current Due to Improved 2 7S DGate Charge Characteristic3 6S Dl Imp

PD - 94531AIRF7475HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Point-of-LoadSynchronous Buck Converter for12V 15m @VGS = 4.5V 19nCApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8

PD- 94037AIRF7473HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Telecom and Data-Com 24 and 48Vinput DC-DC converters100V 26m@VGS = 10V 6.9A Motor Control Uninterrutible Power SupplyBenefits Ultra Low On-ResistanceAA High Speed Switching 1 8S D Low Gate Drive Current Due to Improved2 7S DGate Charge Characteristic3 6S D Im

IRF7473PbF-1HEXFET Power MOSFETAVDS 100 VA1 8S DRDS(on) max 26 m2 7(@V = 10V) S DGSQg (typical) 61 nC3 6S DID 4 56.9 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

PD- 96128SMPS MOSFETIRF7478QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl N Channel MOSFET60V 26@VGS = 10V 4.2Al Surface Mount30@VGS = 4.5V 3.5Al Available in Tape & Reell 150C Operating Temperaturel Automotive [Q101] QualifiedAAl Lead-Free1 8S DDescription 2 7S DSpecifically designed for Autom

PD- 95334IRF7477PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max (mW) IDConverters for Computers and30V 8.5@VGS = 10V 14A Communications10@VGS = 4.5V 11Al Lead-FreeAA1 8S DBenefits2 7S Dl Ultra-Low Gate Impedance3 6l Very Low RDS(on)S Dl Fully Characterized Avalanche Voltage 4 5G Dand CurrentSO-8

PD- 94094AIRF7477SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High Frequency Synchronous Buck30V 8.5@VGS = 10V 14AConverters for Computers and10@VGS = 4.5V 11A CommunicationsBenefitsAA Ultra-Low Gate Impedance1 8S D Very Low RDS(on)2 7S D Fully Characterized Avalanche Voltage3 6S Dand Current4 5G

PD- 95726SMPS MOSFETIRF7471PbFApplicationsl High Frequency Isolated DC-DCHEXFET Power MOSFET Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Usel High Frequency Buck Converters for 40V 13m 10AComputer Processor Powerl Lead-FreeBenefitsAA1 8l Ultra-Low Gate ImpedanceS Dl Very Low RDS(on) 2 7S Dl Fully Characte

PD- 94055AIRF7478SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High frequency DC-DC converters60V 26@VGS = 10V 4.2A30@VGS = 4.5V 3.5ABenefitsAA1 8S D Low Gate to Drain Charge to Reduce2 7Switching LossesS D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DA

IRF7478PbF-1SMPS MOSFETHEXFET Power MOSFETAVDS 60 VA1 8S DRDS(on) max 262 7(@V = 10V) S DGSmRDS(on) max 3 6S D30(@V = 4.5V)GS45G DQg (typical) 21 nCID SO-87.0 A Top View(@T = 25C)AApplicationsl High frequency DC-DC convertersFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible wit

PD - 95278IRF7475PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Point-of-LoadSynchronous Buck Converter for12V 15m @VGS = 4.5V 19nCApplications in Networking &Computing Systems.Al Lead-FreeA1 8S D2 7S DBenefits 3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate ImpedanceSO-8l Fully Characterized Avalanche Voltage

PD- 94097IRF7474HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Telecom and Data-Com 24 and 48V100V 63m@VGS = 10V 4.5Ainput DC-DC converters Motor Control Uninterruptible Power SupplyBenefitsA Low On-ResistanceA1 8S D High Speed Switching2 7 Low Gate Drive Current Due to ImprovedS DGate Charge Characteristic3 6S D Improv

PD- 94036BSMPS MOSFETIRF7471ApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 40V 13m 10A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefitsAA1 8 Ultra-Low Gate ImpedanceS D Very Low RDS(on) 2 7S D Fully Characterized Avalanche Volt

AUTOMOTIVE GRADEAUIRF7478QFeatures HEXFET Power MOSFET Advanced Planar Technology AAV(BR)DSS1 8 60V Low On-Resistance S D Logic Level Gate Drive2 7S DRDS(on) typ.20m Dynamic dV/dT Rating3 6S D 150C Operating Temperaturemax. 26m Fast Switching 45G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,

PD - 95279IRF7476PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency 3.3V and 5V input Point-12V 8.0mW@VGS = 4.5V 15Aof-Load Synchronous Buck Converters forNetcom and Computing Applications.l Power Management for Netcom,AAComputing and Portable Applications.1 8S Dl Lead-Free2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO

PD- 95280IRF7478PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High frequency DC-DC converters60V 26@VGS = 10V 4.2Al Lead-Free30@VGS = 4.5V 3.5ABenefitsAA1 8S Dl Low Gate to Drain Charge to Reduce2 7Switching LossesS Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DApp. Note

PD - 95279IRF7476PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency 3.3V and 5V input Point-12V 8.0mW@VGS = 4.5V 15Aof-Load Synchronous Buck Converters forNetcom and Computing Applications.l Power Management for Netcom,AAComputing and Portable Applications.1 8S Dl Lead-Free2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO

PD- 95280IRF7478PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High frequency DC-DC converters60V 26@VGS = 10V 4.2Al Lead-Free30@VGS = 4.5V 3.5ABenefitsAA1 8S Dl Low Gate to Drain Charge to Reduce2 7Switching LossesS Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DApp. Note

SMD Type MOSFETN-Channel MOSFETIRF7476 (KRF7476)SOP-8 Features VDS (V) = 12V ID = 15 A (VGS = 10V)1.50 0.15 RDS(ON) 8m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.8V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 Gate1 8S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain

IRF7475TRPwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7473TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

IRF7478TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL

IRF7471TRwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectifi

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF7473TRPBFFEATURESWith SOP-8 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB