IRF7493 Todos los transistores

 

IRF7493 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7493
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SO8
 

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IRF7493 Datasheet (PDF)

 ..1. Size:159K  international rectifier
 irf7493pbf.pdf pdf_icon

IRF7493

PD - 95289IRF7493PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High frequency DC-DC convertersl Lead-Free 15m @VGS=10V80V 35nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Av

 ..2. Size:92K  international rectifier
 irf7493.pdf pdf_icon

IRF7493

PD - 94654PROVISIONALIRF7493HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters80V 15m @VGS = 10V 9.2ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avalanch

 0.1. Size:218K  international rectifier
 irf7493pbf-1.pdf pdf_icon

IRF7493

IRF7493PbF-1HEXFET Power MOSFETVDS 80 VAA1 8S DRDS(on) max 15 m2 7(@V = 10V)GS S DQg (typical) 35 nC3 6S DID 4 59.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmenta

 8.1. Size:146K  international rectifier
 irf7495pbf.pdf pdf_icon

IRF7493

PD - 95288IRF7495PbFHEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters100V 22m @VGS = 10V 7.3Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avala

MOSTRAR MÁS

Otros transistores... IRF7473 , IRF7475 , IRF7476 , IRF7478 , IRF7478Q , IRF7488 , IRF7490 , IRF7492 , 10N60 , IRF7494 , IRF7495 , IRF7607 , IRF7665S2 , IRF7805 , IRF7749L2 , IRF7759L2 , IRF7769L2 .

History: SML60C12 | FDY102PZ

 

 
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