IRF7805Q Todos los transistores

 ..1. Size:232K  international rectifier
 irf7805q.pdf

PD 96114 IRF7805QPbF l Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount A 1 8 l Available in Tape & Reel S D l 150 C Operating Temperature 2 7 S D l Automotive [Q101] Qualified 3 6 S D l Lead-Free 4 5 G D Description SO-8 Top View Specifically designed for Automotive applications, these HEXFET Power MOSFET's in package utilize

 0.1. Size:203K  international rectifier
 auirf7805q.pdf

PD 96367B AUIRF7805Q Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance A A V(BR)DSS 30V 1 l Logic Level 8 S D l N Channel MOSFET 2 7 S D RDS(on) typ. 9.2m l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 max. 11m l 150 C Operating Temperature G D l Automotive [Q101] Qualified Top View ID 13A l Lead-Free, RoHS Compliant D

 7.1. Size:270K  international rectifier
 irf7805z.pdf

PD - 94635B IRF7805Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curr

 7.2. Size:289K  international rectifier
 irf7805zgpbf.pdf

PD - 96253 IRF7805ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D l Halogen-Free 2 7 S D 3 6 Benefits S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 Top View l

 7.3. Size:236K  international rectifier
 irf7805 irf7805a.pdf

PD 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistan

 7.4. Size:236K  international rectifier
 irf7805.pdf

PD 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistan

 7.5. Size:270K  international rectifier
 irf7805zpbf.pdf

PD - 96011A IRF7805ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Vol

 7.6. Size:330K  international rectifier
 irf7805pbf.pdf

IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A 1 8 S D Ideal for Mobile DC-DC Converters 2 7 S D Low Conduction Losses 3 6 S D Low Switching Losses 4 5 G D Lead-Free SO-8 Top View IRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to

 7.7. Size:2271K  kexin
 irf7805z.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) Features SOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V) A HEXFET Power MOSFET A 1 8 1.50 0.15 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA