IRF7807D2 Todos los transistores

 

IRF7807D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7807D2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO8
 

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IRF7807D2 Datasheet (PDF)

 ..1. Size:134K  international rectifier
irf7807d2.pdf pdf_icon

IRF7807D2

PD- 93762IRF7807D2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

 6.1. Size:165K  international rectifier
irf7807d1.pdf pdf_icon

IRF7807D2

PD- 93761IRF7807D1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters Up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

 7.1. Size:257K  international rectifier
irf7807trpbf-1 irf7807atrpbf-1.pdf pdf_icon

IRF7807D2

IRF7807TRPbF-1IRF7807ATRPbF-1HEXFET Chip-Set for DC-DC ConvertersAVDS 30 V1 8S DRDS(on) max 2 7S D25 m(@V = 4.5V)GS3 6S DQg (typical) 12 nC4 5G DID 8.3 A(@T = 25C) Top View SO-8AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co

 7.2. Size:239K  international rectifier
irf7807.pdf pdf_icon

IRF7807D2

PD 91747CIRF7807/IRF7807AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8 Top Viewbalance of on-resistanc

Otros transistores... IRF7779L2 , IRF7799L2 , IRF7805A , IRF7805Q , IRF7805Z , IRF7805ZG , IRF7807A , IRF7807D1 , K4145 , IRF7807V , IRF7807VD1 , IRF7807VD2 , IRF7807Z , IRF7809AV , IRF7811AV , IRF7815 , IRF7821 .

History: 2SJ218 | BL4N80-P | WSR80P06

 

 
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