IRF7807D2 Todos los transistores

 ..1. Size:134K  international rectifier
 irf7807d2.pdf

PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac

 6.1. Size:165K  international rectifier
 irf7807d1.pdf

PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters Up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac

 7.1. Size:257K  international rectifier
 irf7807trpbf-1 irf7807atrpbf-1.pdf

IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET Chip-Set for DC-DC Converters A VDS 30 V 1 8 S D RDS(on) max 2 7 S D 25 m (@V = 4.5V) GS 3 6 S D Qg (typical) 12 nC 4 5 G D ID 8.3 A (@T = 25 C) Top View SO-8 A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co

 7.2. Size:239K  international rectifier
 irf7807.pdf

PD 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistanc

 7.3. Size:115K  international rectifier
 irf7807vd2.pdf

PD-94079 IRF7807VD2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

 7.4. Size:117K  international rectifier
 irf7807vd1.pdf

PD-94078 IRF7807VD1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

 7.5. Size:213K  international rectifier
 irf7807vtrpbf-1.pdf

IRF7807VTRPbF-1 HEXFET Power MOSFET VDS 30 V A 1 8 S D RDS(on) max 25 m 2 7 (@V = 4.5V) S D GS Qg (typical) 9.5 nC 3 6 S D ID 4 5 8.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

 7.6. Size:261K  international rectifier
 irf7807z.pdf

PD - 94707A IRF7807Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m @VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l

 7.7. Size:214K  international rectifier
 irf7807zpbf.pdf

PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m @VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D

 7.8. Size:159K  international rectifier
 irf7807v.pdf

PD-94108 IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses A Low Switching Losses 1 8 S D 2 7 Description S D This new device employs advanced HEXFET Power 3 6 S D MOSFET technology to achieve an unprecedented 4 5 balance of on-resistance and gate charge. The G D reduction of conduction and switching losses m

 7.9. Size:823K  cn vbsemi
 irf7807atr.pdf

IRF7807ATR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch