IRF8327S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF8327S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF8327S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.9 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm

Encapsulados: DIRECTFET

Búsqueda de reemplazo de IRF8327S MOSFET

- Selecciónⓘ de transistores por parámetros

IRF8327S datasheet

..1. Size:258K international rectifier
irf8327spbf.pdf pdf_icon

IRF8327SPbF DirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (

8.1. Size:481K st
irf830 irf831 irf832 irf833-fi.pdf pdf_icon

9.1. Size:254K international rectifier
irf8313pbf.pdf pdf_icon

PD - 97145 IRF8313PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Load Switch l DC/DC Conversion 30V 15.5m 6.0nC @VGS = 10V Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current S2 1 8 D2 l 20V VGS Max. Gate Rating G2 2 7 D2 l 100% Tested for RG S1 3 6 D1 l Lead-Free (Qualified to 260 C Reflow) G1 4 5 D1 l RoHS Compliant

9.2. Size:155K international rectifier
irf830as.pdf pdf_icon

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

9.3. Size:268K international rectifier
irf8308mpbf irf8308mtrpbf.pdf pdf_icon

PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

9.4. Size:326K international rectifier
irf830spbf.pdf pdf_icon

PD - 95542 IRF830SPbF Lead-Free SMD-220 7/21/04 Document Number 91064 www.vishay.com 1 IRF830SPbF Document Number 91064 www.vishay.com 2 IRF830SPbF Document Number 91064 www.vishay.com 3 IRF830SPbF Document Number 91064 www.vishay.com 4 IRF830SPbF Document Number 91064 www.vishay.com 5 IRF830SPbF Document Number 91064 www.vishay.com 6 IRF830SPbF Peak Diode

9.5. Size:267K international rectifier
irf8306mtrpbf.pdf pdf_icon

PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max 20V max 1.8m @ 10V 2.8m @ 4.5V l Low Profile (

9.6. Size:220K international rectifier
irf8302mpbf.pdf pdf_icon

PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max 20V max 1.4m @ 10V 2.2m @ 4.5V l Low Profile (

9.7. Size:338K international rectifier
irf8301mtrpbf.pdf pdf_icon

StrongIRFET IRF8301MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l Ultra-low RDS(on) VDSS VGS RDS(on) RDS(on) l Low Profile (

9.8. Size:338K international rectifier
irf8301m.pdf pdf_icon

StrongIRFET IRF8301MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l Ultra-low RDS(on) VDSS VGS RDS(on) RDS(on) l Low Profile (

9.9. Size:108K international rectifier
irf830a.pdf pdf_icon

PD- 91878C SMPS MOSFET IRF830A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren

9.10. Size:273K international rectifier
irf8304mpbf.pdf pdf_icon

IRF8304MPbF DirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (

9.11. Size:875K international rectifier
irf830pbf.pdf pdf_icon

PD - 94881 IRF830PbF Lead-Free 12/10/03 Document Number 91063 www.vishay.com 1 IRF830PbF Document Number 91063 www.vishay.com 2 IRF830PbF Document Number 91063 www.vishay.com 3 IRF830PbF Document Number 91063 www.vishay.com 4 IRF830PbF Document Number 91063 www.vishay.com 5 IRF830PbF Document Number 91063 www.vishay.com 6 IRF830PbF TO-220AB Package Outline

9.12. Size:168K international rectifier
irf830apbf.pdf pdf_icon

PD- 94820 SMPS MOSFET IRF830APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Volt

9.13. Size:155K international rectifier
irf830al.pdf pdf_icon

9.14. Size:676K international rectifier
irf830aspbf irf830alpbf.pdf pdf_icon

PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Vol

9.15. Size:58K philips
irf830 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 A g RDS(ON) 1.5 s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTI

9.16. Size:92K st
irf830.pdf pdf_icon

IRF830 N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF830 500 V

9.17. Size:888K fairchild semi
irf830b irfs830b.pdf pdf_icon

9.18. Size:888K fairchild semi
irf830b.pdf pdf_icon

9.19. Size:345K samsung
irfp430-433 irf830-833.pdf pdf_icon

9.20. Size:911K samsung
irf830a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

9.21. Size:207K vishay
irf830alpbf irf830aspbf sihf830al sihf830as.pdf pdf_icon

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 24 Requirement Qgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterize

9.22. Size:174K vishay
irf830lpbf irf830spbf sihf830l.pdf pdf_icon

IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 500 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 38 Repetitive avalanche rated Qgs (nC) 5.0 Fast switching Available Qgd (nC) 22 Ease of paralleling Configuration Single

9.23. Size:1091K vishay
irf830a sihf830a.pdf pdf_icon

IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configurati

9.24. Size:1093K vishay
irf830apbf sihf830a.pdf pdf_icon

9.25. Size:234K vishay
irf830s sihf830s irf830l sihf830l.pdf pdf_icon

9.26. Size:201K vishay
irf830 sihf830.pdf pdf_icon

IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DE

9.27. Size:62K onsemi
irf830.rev0.pdf pdf_icon

IRF830 Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http //onsemi.com Silicon Gate for Fast Switching Speeds TMOS POWER FET Low RDS(on) to Minimize On Losses, Specified at Elevated Temp

9.28. Size:46K hsmc
hirf830.pdf pdf_icon

Spec. No. MOS200407 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi

9.29. Size:95K ape
irf830.pdf pdf_icon

IRF830 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.

9.30. Size:95K ape
irf830i-hf.pdf pdf_icon

IRF830I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5A G RoHS Compliant & Halogen-Free S Description G APEC MOSFET provide the power designer with the best combination of D TO-220CFM(I) S fast switching ,

9.31. Size:839K blue-rocket-elect
irf830.pdf pdf_icon

IRF830 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

9.32. Size:1986K kexin
irf830s.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET IRF830S (KRF830S) Features VDS (V) = 500V ID = 4.5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast Switching Repetitive Avalanche Rated D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 20 Tc=25 4.5 Continuous Drain Current ID

9.33. Size:880K cn vbsemi
irf830astrl.pdf pdf_icon

IRF830ASTRL www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd

9.34. Size:2535K cn vbsemi
irf830p.pdf pdf_icon

IRF830P www.VBsemi.tw N hannel 600 D S Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 Available requirement RDS(on) ( )VGS = 10 V 0.8 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single

9.35. Size:231K inchange semiconductor
irf830fi.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF830FI DESCRIPTION Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSO

9.36. Size:114K inchange semiconductor
irf830.pdf pdf_icon

MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=500V; RDS(ON) 1.5 ;ID=4.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 4

9.37. Size:234K inchange semiconductor
irf830a.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF830A FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply Uninterruptable Power Supply High speed power switc

9.38. Size:231K inchange semiconductor
irf831fi.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF831FI DESCRIPTION Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSO

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