IRF8788 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 97137AIRF8788PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) max QgProcessor Power30V 2.8ml Synchronous Rectifier MOSFET for :@VGS = 10V 44nCIsolated DC-DC ConvertersBenefitsAAl Very Low Gate Charge 1 8S Dl Very Low RDS(on) at 4.5V VGS2 7S Dl Ultra-Low Gate Impedance3 6S Dl Fully Characterized Avalanche Voltage4

PD - 97137AIRF8788PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) max QgProcessor Power30V 2.8ml Synchronous Rectifier MOSFET for :@VGS = 10V 44nCIsolated DC-DC ConvertersBenefitsAAl Very Low Gate Charge 1 8S Dl Very Low RDS(on) at 4.5V VGS2 7S Dl Ultra-Low Gate Impedance3 6S Dl Fully Characterized Avalanche Voltage4

IRF8788PbF-1HEXFET Power MOSFETVDS 30 V AA1 8S DRDS(on) max 2.82 7S D(@V = 10V)GSmRDS(on) max 3 6S D3.8(@V = 4.5V)GS4 5G DQg (typical) 44 nCSO-8ID Top View24 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS

PD - 96116IRF8714PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQgConverters used for NotebookProcessor Power8.7m @VGS = 10V30V 8.1nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsAA1 8l Very Low Gate ChargeS Dl Very Low RDS(on) at 4.5V VGS 2 7S Dl Ultra-Low Gate Impedance3 6S Dl Fully

PD - 96264IRF8707GPbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook Processor Power11.9m @VGS = 10V30V 6.2nCl Control MOSFET for Isolated DC-DC Converters in Networking SystemsABenefitsA1 8S Dl Very Low Gate Charge2 7S Dl Very Low RDS(on) at 4.5V VGS3 6l Ultra-Low Gate ImpedanceS D

IRF8736PbF-1HEXFET Power MOSFETVDS 30 VAA1 8S DRDS(on) max 4.8 m2 7(@V = 10V)GS S DQg (typical) 17 nC3 6S DID 4 518 AG D(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Pack

IRF8721PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 8.5 m2 7S D(@V = 10V)GS3 6Qg (typical) 8.3 nCS DID 4 5G D14 A(@T = 25C)ASO-8Top ViewApplicationsl Control MOSFET of Sync-Buck Converters used for Notebook Processor Powerl Control MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinou

IRF8707PbF-1HEXFET Power MOSFETVDS 30 V AA1 8S DRDS(on) max 11.92 7(@V = 10V) S DGSmRDS(on) max 3 6S D17.5(@V = 4.5V)GS4 5G DQg (typical) 6.2 nCSO-8ID Top View11.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingR

PD - 96226IRF8734PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook3.5m @VGS = 10V30V 20nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Volt

PD - 97119IRF8721PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck VDSS RDS(on) maxQg Converters used for Notebook Processor8.5m30V :@VGS = 10V8.3nCPowerl Control MOSFET for Isolated DC-DCConverters in Networking SystemsAABenefits1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Impedance45G Dl Ful

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

PD - 96118AIRF8707PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook Processor Power11.9m @VGS = 10V30V 6.2nCl Control MOSFET for Isolated DC-DC Converters in Networking SystemsAA1 8BenefitsS Dl Very Low Gate Charge 2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4

IRF8714PbF-1HEXFET Power MOSFETVDS 30 VAA1 8S DRDS(on) max 8.7 m2 7(@V = 10V) S DGSQg (typical) 8.1 nC 3 6S DID 4 514 A G D(@T = 25C)ASO-8Top ViewApplicationsl Control MOSFET of Sync-Buck Converters used for Notebook Processor Powerl Control MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout

PD - 96263IRF8714GPbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQgConverters used for NotebookProcessor Power8.7m @VGS = 10V30V 8.1nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsAAl Very Low Gate Charge1 8S Dl Very Low RDS(on) at 4.5V VGS2 7S Dl Ultra-Low Gate Impedance3 6S Dl Full

PD - 97120IRF8736PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook4.8m @VGS = 10V30V 17nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltage

PD - 96262IRF8721GPbFApplications HEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook ProcessorPower8.5m @VGS = 10V30V 8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsABenefitsA1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6l Low Gate Impedance S D4 5l Fully Chara

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

PD - 96116IRF8714PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQgConverters used for NotebookProcessor Power8.7m @VGS = 10V30V 8.1nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsAA1 8l Very Low Gate ChargeS Dl Very Low RDS(on) at 4.5V VGS 2 7S Dl Ultra-Low Gate Impedance3 6S Dl Fully

PD - 96264IRF8707GPbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook Processor Power11.9m @VGS = 10V30V 6.2nCl Control MOSFET for Isolated DC-DC Converters in Networking SystemsABenefitsA1 8S Dl Very Low Gate Charge2 7S Dl Very Low RDS(on) at 4.5V VGS3 6l Ultra-Low Gate ImpedanceS D

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n

PD - 96226IRF8734PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook3.5m @VGS = 10V30V 20nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Volt

PD - 97119IRF8721PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck VDSS RDS(on) maxQg Converters used for Notebook Processor8.5m30V :@VGS = 10V8.3nCPowerl Control MOSFET for Isolated DC-DCConverters in Networking SystemsAABenefits1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Impedance45G Dl Ful

PD - 96118AIRF8707PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook Processor Power11.9m @VGS = 10V30V 6.2nCl Control MOSFET for Isolated DC-DC Converters in Networking SystemsAA1 8BenefitsS Dl Very Low Gate Charge 2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4

PD - 97120IRF8736PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook4.8m @VGS = 10V30V 17nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltage

IRF8736TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF8721TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch