IRFB23N20D Todos los transistores

 

IRFB23N20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB23N20D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB23N20D Datasheet (PDF)

 ..1. Size:275K  international rectifier
 irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf pdf_icon

IRFB23N20D

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

 ..2. Size:279K  international rectifier
 irfb23n20dpbf irfs23n20dpbf.pdf pdf_icon

IRFB23N20D

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

 ..3. Size:196K  international rectifier
 irfb23n20d.pdf pdf_icon

IRFB23N20D

PD- 93904AIRFB23N20D IRFS23N20DSMPS MOSFET IRFSL23N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.10 24ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

 7.1. Size:278K  international rectifier
 irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf pdf_icon

IRFB23N20D

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

MOSTRAR MÁS

Otros transistores... IRF8714 , IRF8714G , IRF8721 , IRF8721G , IRF8734 , IRF8736 , IRF8788 , IRFB23N15D , IRFB31N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , IRFB3006G , IRFB3077 , IRFB3077G , IRFB31N20D .

 

 
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