IRFB3077 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB3077
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 210 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 160 nC
   trⓘ - Tiempo de subida: 87 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRFB3077

IRFB3077 Datasheet (PDF)

..1. Size:295K international rectifier
irfb3077pbf.pdf

PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

..2. Size:295K infineon
irfb3077pbf.pdf

..3. Size:246K inchange semiconductor
irfb3077.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3077IIRFB3077FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. Size:291K international rectifier
irfb3077gpbf.pdf

PD - 96200IRFB3077GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuits max. 3.3mBenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dtID (P

8.1. Size:296K international rectifier
irfb3006pbf.pdf

PD -97143IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.5m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)270A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRug

8.2. Size:457K international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

8.3. Size:289K international rectifier
irfb3004gpbf.pdf

PD - 96237IRFB3004GPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited) 340ABenefitsID (Package Limited) 195A Sl Improved Gate, Avalanche and Dynamic dV/dtRugged

8.4. Size:288K international rectifier
irfb3006gpbf.pdf

PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

8.5. Size:245K infineon
irfb3006pbf.pdf

IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous RectificationRDS(on) typ.2.1m in SMPSl Uninterruptible Power Supply max. 2.5ml High Speed Power SwitchingGID (Silicon Limited) 270A l Hard Switched and High Frequency CircuitsID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and DynamicDdV/dt Ruggednessl Full

8.6. Size:457K infineon
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

8.7. Size:288K infineon
irfb3006gpbf.pdf

8.8. Size:247K inchange semiconductor
irfb3004.pdf

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004FEATURESStatic drain-source on-resistance:RDS(on) 1.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched a

8.9. Size:246K inchange semiconductor
irfb3006.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3006 IIRFB3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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