IRFB3077 Todos los transistores

 

IRFB3077 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB3077

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 370 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 210 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 160 nC

Resistencia drenaje-fuente RDS(on): 0.0033 Ohm

Empaquetado / Estuche: TO220AB

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IRFB3077 Datasheet (PDF)

1.1. irfb3077pbf.pdf Size:295K _upd-mosfet

IRFB3077
IRFB3077

PD - 97047B IRFB3077PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m : l Hard Switched and High Frequency Circuits max. 3.3m : Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A c l Improved Gate, Avalanche and Dynamic dV/

1.2. irfb3077gpbf.pdf Size:291K _upd-mosfet

IRFB3077
IRFB3077

PD - 96200 IRFB3077GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dt ID (P

 4.1. irfb3006pbf.pdf Size:296K _upd-mosfet

IRFB3077
IRFB3077

PD -97143 IRFB3006PbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m : l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Rug

4.2. irfb3006gpbf.pdf Size:288K _upd-mosfet

IRFB3077
IRFB3077

PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 4.3. irfb3004gpbf.pdf Size:289K _upd-mosfet

IRFB3077
IRFB3077

PD - 96237 IRFB3004GPbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4mΩ l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75mΩ G ID (Silicon Limited) 340A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic dV/dt Rugged

4.4. irfb3004pbf.pdf Size:457K _upd-mosfet

IRFB3077
IRFB3077

PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m Ω l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m Ω G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,

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