IRFB3206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB3206
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 210 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 120 nC
   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRFB3206

IRFB3206 Datasheet (PDF)

..1. Size:323K international rectifier
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf

IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD

..2. Size:323K infineon
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf

..3. Size:246K inchange semiconductor
irfb3206.pdf

isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched and Hi

0.1. Size:295K international rectifier
irfb3206gpbf.pdf

PD - 96210IRFB3206GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4ml Uninterruptible Power Supplyl High Speed Power Switching max. 3.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

0.2. Size:295K infineon
irfb3206gpbf.pdf

7.1. Size:282K international rectifier
auirfb3207.pdf

PD - 96322AUTOMOTIVE GRADEAUIRFB3207HEXFET Power MOSFETFeaturesD V(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) typ.3.6ml 175C Operating Temperaturemax. 4.5mGl Fast SwitchingID (Silicon Limited)170A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited)75A l Automotive Qualified *

7.2. Size:286K international rectifier
irfb3207zgpbf.pdf

PD - 96201IRFB3207ZGPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPSDVDSS 75Vl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power Switching max. 4.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 170AID (Package Limited)S 120ABenefitsDl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

7.3. Size:387K international rectifier
irfb3207pbf.pdf

PD - 95708DIRFB3207PbFIRFS3207PbFIRFSL3207PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 3.6mG max. 4.5mBenefitsSID 170Al Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

7.4. Size:326K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

7.5. Size:379K infineon
irfb3207 irfs3207 irfsl3207.pdf

PD - 96893CIRFB3207IRFS3207IRFSL3207ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switching3.6mRDS(on) typ.l Hard Switched and High Frequency CircuitsGBenefits max. 4.5ml Worldwide Best RDS(on) in TO-220SID 180Al Improved Gate, Avalanche and Dynamic dV/dtRuggedn

7.6. Size:330K infineon
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

7.7. Size:246K inchange semiconductor
irfb3207z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3207ZIIRFB3207ZFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

7.8. Size:245K inchange semiconductor
irfb3207zg.pdf

isc N-Channel MOSFET Transistor IRFB3207ZGIIRFB3207ZGFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

7.9. Size:246K inchange semiconductor
irfb3207.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3207 IIRFB3207FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: