IRFB3256 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB3256
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 206 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 77 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRFB3256 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFB3256 datasheet
..1. Size:253K international rectifier
irfb3256pbf.pdf 
PD - 97727 IRFB3256PbF HEXFET Power MOSFET D VDSS 60V RDS(on) typ. 2.7m Applications max. 3.4m l High Efficiency Synchronous Rectification in SMPS G ID (Silicon Limited) l Uninterruptible Power Supply 206A l High Speed Power Switching ID (Package Limited) 75A S l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugg
8.1. Size:379K international rectifier
irfb3207 irfs3207 irfsl3207.pdf
PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn
8.2. Size:295K international rectifier
irfb3206gpbf.pdf
PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
8.3. Size:282K international rectifier
auirfb3207.pdf
PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified *
8.4. Size:323K international rectifier
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf
IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D
8.5. Size:286K international rectifier
irfb3207zgpbf.pdf
PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes
8.6. Size:387K international rectifier
irfb3207pbf.pdf
PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized
8.7. Size:330K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf
IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic
8.8. Size:246K inchange semiconductor
irfb3207z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM
8.9. Size:246K inchange semiconductor
irfb3206.pdf
isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and Hi
8.10. Size:245K inchange semiconductor
irfb3207zg.pdf
isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.11. Size:246K inchange semiconductor
irfb3207.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207 IIRFB3207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU
Otros transistores... IRFB3077
, IRFB3077G
, IRFB31N20D
, IRFB3206
, IRFB3206G
, IRFB3207
, IRFB3207Z
, IRFB3207ZG
, IRF830
, IRFB3306
, IRFB3306G
, IRFB3307
, IRFB3307Z
, IRFB3307ZG
, IRFB33N15D
, IRFB3507
, IRFB3607
.
