IRFB3806 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB3806  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0158 Ohm

Encapsulados: TO220AB

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IRFB3806 datasheet

 ..1. Size:564K  international rectifier
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf pdf_icon

IRFB3806

PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C

 ..2. Size:246K  inchange semiconductor
 irfb3806.pdf pdf_icon

IRFB3806

isc N-Channel MOSFET Transistor IRFB3806 IIRFB3806 FEATURES Static drain-source on-resistance RDS(on) 15.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for High speed power switching and high efficiency synchronous rectification in SMPS AB

 8.1. Size:336K  international rectifier
 irfb38n20dpbf irfs38n20dpbf.pdf pdf_icon

IRFB3806

PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify De

 8.2. Size:583K  infineon
 irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf pdf_icon

IRFB3806

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

MOSTRAR MÁS

Otros transistores... IRFB3306G, IRFB3307, IRFB3307Z, IRFB3307ZG, IRFB33N15D, IRFB3507, IRFB3607, IRFB3607G, IRF830, IRFB38N20D, IRFB4019, IRFB4020, IRFB4110, IRFB4110G, IRFB4110Q, IRFB4115, IRFB4115G