IRFB3806 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB3806

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 71 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 43 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 22 nC

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 130 pF

Resistencia drenaje-fuente RDS(on): 0.0158 Ohm

Paquete / Caja (carcasa): TO220AB

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IRFB3806 Datasheet (PDF)

..1. irfb3806pbf irfs3806pbf irfsl3806pbf.pdf Size:564K _international_rectifier

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

..2. irfb3806pbf irfs3806pbf irfsl3806pbf.pdf Size:564K _infineon

..3. irfb3806.pdf Size:246K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB3806IIRFB3806FEATURESStatic drain-source on-resistance:RDS(on) 15.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for High speed power switching and high efficiencysynchronous rectification in SMPSAB

8.1. irfb38n20dpbf irfs38n20dpbf.pdf Size:336K _international_rectifier

PD - 97001CIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbFHEXFET Power MOSFETApplicationsKey Parametersl High frequency DC-DC convertersVDS200 Vl Plasma Display PanelVDS (Avalanche) min.260 VBenefitsRDS(ON) max @ 10V m54l Low Gate-to-Drain Charge toTJ max175 CReduce Switching Lossesl Fully Characterized CapacitanceIncluding Effective COSS to SimplifyDe

8.2. irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf Size:583K _infineon

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

8.3. irfb38n20d.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB38N20DIIRFB38N20DFEATURESStatic drain-source on-resistance:RDS(on) 54mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Otros transistores... IRFB3306G , IRFB3307 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRF9640 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 , IRFB4115G .

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