IRFB4019 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB4019
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 80 W
Tensión drenaje-fuente |Vds|: 150 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 17 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4.9 V
Carga de compuerta (Qg): 13 nC
Tiempo de elevación (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 74 pF
Resistencia drenaje-fuente RDS(on): 0.095 Ohm
Paquete / Caja (carcasa): TO220AB
Búsqueda de reemplazo de MOSFET IRFB4019
IRFB4019 Datasheet (PDF)
..1. irfb4019pbf.pdf 
Size:281K _international_rectifier
PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C
..2. irfb4019pbf.pdf Size:281K _infineon
PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C
..3. irfb4019.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4019IIRFB4019FEATURESStatic drain-source on-resistance:RDS(on) 95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATINGS
8.1. irfb4020pbf.pdf Size:641K _international_rectifier
PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM
8.2. irfb4020pbf.pdf Size:641K _infineon
PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM
8.3. irfb4020.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4020IIRFB4020FEATURESStatic drain-source on-resistance:RDS(on) 100mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATING
Otros transistores... IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRFB3806 , IRFB38N20D , IRFP90N20D , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 , IRFB4115G , IRFB4127 , IRFB41N15D .
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