IRFB4310 Todos los transistores

 ..1. Size:376K  international rectifier
 irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 ..2. Size:245K  inchange semiconductor
 irfb4310.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310 IIRFB4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 0.1. Size:285K  international rectifier
 irfb4310gpbf.pdf

PD - 96190 IRFB4310GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 0.2. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 0.3. Size:291K  international rectifier
 irfb4310zgpbf.pdf

PD - 96189 IRFB4310ZGPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

 0.4. Size:251K  inchange semiconductor
 irfb4310z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI

 0.5. Size:206K  inchange semiconductor
 irfb4310zpbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM