IRFB4410Z Todos los transistores

 

IRFB4410Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB4410Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 97 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRFB4410Z Datasheet (PDF)

 ..1. Size:330K  international rectifier
 irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf pdf_icon

IRFB4410Z

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 ..2. Size:251K  inchange semiconductor
 irfb4410z.pdf pdf_icon

IRFB4410Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410ZIIRFB4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 0.1. Size:294K  international rectifier
 irfb4410zgpbf.pdf pdf_icon

IRFB4410Z

PD - 96213IRFB4410ZGPbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized C

 0.2. Size:245K  inchange semiconductor
 irfb4410zg.pdf pdf_icon

IRFB4410Z

isc N-Channel MOSFET Transistor IRFB4410ZGIIRFB4410ZGFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

MOSTRAR MÁS

Otros transistores... IRFB4310 , IRFB4310G , IRFB4310Z , IRFB4310ZG , IRFB4321 , IRFB4321G , IRFB4332 , IRFB4410 , IRFB4227 , IRFB4410ZG , IRFB4610 , IRFB4615 , IRFB4620 , IRFB4710 , IRFB52N15D , IRFB5615 , IRFB5620 .

History: IXTP50N28T | 3SK249

 

 
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