IRFB4410Z Todos los transistores

 ..1. Size:330K  international rectifier
 irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

 ..2. Size:251K  inchange semiconductor
 irfb4410z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410Z IIRFB4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 0.1. Size:294K  international rectifier
 irfb4410zgpbf.pdf

PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized C

 0.2. Size:245K  inchange semiconductor
 irfb4410zg.pdf

isc N-Channel MOSFET Transistor IRFB4410ZG IIRFB4410ZG FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 6.1. Size:799K  international rectifier
 irfb4410pbf irfs4410pbf irfsl4410pbf.pdf

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 6.2. Size:278K  international rectifier
 auirfb4410.pdf

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

 6.3. Size:802K  international rectifier
 irfb4410.pdf

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

 6.4. Size:802K  international rectifier
 irfb4410 irfs4410 irfsl4410.pdf

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

 6.5. Size:246K  inchange semiconductor
 irfb4410.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410 IIRFB4410 FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU