IRFB4610 Todos los transistores

 

IRFB4610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB4610
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 73 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 87 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB4610 Datasheet (PDF)

 ..1. Size:399K  international rectifier
 irfb4610pbf irfs4610pbf irfsl4610pbf.pdf pdf_icon

IRFB4610

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 ..2. Size:381K  international rectifier
 irfb4610 irfs4610 irfsl4610.pdf pdf_icon

IRFB4610

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 ..3. Size:246K  inchange semiconductor
 irfb4610.pdf pdf_icon

IRFB4610

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4610IIRFB4610FEATURESStatic drain-source on-resistance:RDS(on) 14mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:717K  infineon
 auirfb4610 auirfs4610.pdf pdf_icon

IRFB4610

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

MOSTRAR MÁS

Otros transistores... IRFB4310Z , IRFB4310ZG , IRFB4321 , IRFB4321G , IRFB4332 , IRFB4410 , IRFB4410Z , IRFB4410ZG , IRFP250N , IRFB4615 , IRFB4620 , IRFB4710 , IRFB52N15D , IRFB5615 , IRFB5620 , IRFB59N10D , IRFB61N15D .

History: NCEP045N10

 

 
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