IRFBA1404P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBA1404P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 206 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 1680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: TO273AA SUPER-220

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IRFBA1404P Datasheet (PDF)

..1. Size:199K international rectifier
irfba1404ppbf.pdf

PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri

..2. Size:199K infineon
irfba1404ppbf.pdf

5.1. Size:115K international rectifier
irfba1404.pdf

PD - 93806AUTOMOTIVE MOSFETIRFBA1404PTypical ApplicationsHEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric BrakingDVDSS = 40V Radiator Fan ControlBenefits Advanced Process TechnologyRDS(on) = 3.7m Ultra Low On-ResistanceG Increase Current Handling CapabilityID = 206A 175C Operating TemperatureS Fast Switchi

6.1. Size:238K international rectifier
irfba1405p.pdf

PD -94111AUTOMOTIVE MOSFETIRFBA1405PTypical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper ControlD Climate ControlVDSS = 55V Power DoorBenefits Advanced Process TechnologyRDS(on) = 5.0m Ultra Low On-ResistanceG Dynamic dv/dt RatingID = 174AV 175C Operating TemperatureS Fast Switching Repetitiv

6.2. Size:211K international rectifier
auirfba1405.pdf

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

6.3. Size:213K international rectifier
irfba1405ppbf.pdf

PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti

6.4. Size:216K infineon
irfba1405ppbf.pdf

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