IRFBA90N20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBA90N20D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 650 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 98 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 160 nC
trⓘ - Tiempo de subida: 160 nS
Cossⓘ - Capacitancia de salida: 1040 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: TO273AA SUPER-220
Búsqueda de reemplazo de MOSFET IRFBA90N20D
IRFBA90N20D Datasheet (PDF)
irfba90n20d.pdf
PD - 94300ASMPS MOSFETIRFBA90N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageSuper-220and CurrentAbso
irfba90n20dpbf.pdf
PD - 95902SMPS MOSFETIRFBA90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Super-220l Fully Characterized Avalanche Voltageand
irfba90n20dpbf.pdf
PD - 95902SMPS MOSFETIRFBA90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Super-220l Fully Characterized Avalanche Voltageand
irfba1404ppbf.pdf
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irfba1405p.pdf
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auirfba1405.pdf
PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS
irfba31n50l.pdf
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irfba34n50c.pdf
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irfba22n50apbf.pdf
PD-91886CIRFBA22N50ASMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptible Power Supply 500V 0.23 24Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Voltage an
irfba1405ppbf.pdf
PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti
irfba22n50a.pdf
PD-91866BIRFBA22N50ASMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23 24A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curr
irfba35n60c.pdf
PD - 93800APROVISIONALIRFBA35N60CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080 35A High Speed Power SwitchingBenefits Low Gate Charge Qg Reduces DriveRequired Improved Gate Resistance for FasterSwitching Fully Characterized Capacitance andAvalanche Voltage and Current Sup
irfba1404.pdf
PD - 93806AUTOMOTIVE MOSFETIRFBA1404PTypical ApplicationsHEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric BrakingDVDSS = 40V Radiator Fan ControlBenefits Advanced Process TechnologyRDS(on) = 3.7m Ultra Low On-ResistanceG Increase Current Handling CapabilityID = 206A 175C Operating TemperatureS Fast Switchi
irfba1404ppbf.pdf
PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri
irfba1405ppbf.pdf
PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti
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