IRFBA90N20D Todos los transistores

 ..1. Size:117K  international rectifier
 irfba90n20d.pdf

PD - 94300A SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023 98A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage Super-220 and Current Abso

 ..2. Size:133K  international rectifier
 irfba90n20dpbf.pdf

PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023 98A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Super-220 l Fully Characterized Avalanche Voltage and

 9.1. Size:199K  international rectifier
 irfba1404ppbf.pdf

PD - 95903A IRFBA1404PPbF HEXFET Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 40V Benefits RDS(on) = 3.7m l Advanced Process Technology G l Ultra Low On-Resistance ID = 206A l Increase Current Handling Capability S l 175 C Operating Temperature l Fast Switching l Dynamic dv/dt Rating l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Descri

 9.2. Size:238K  international rectifier
 irfba1405p.pdf

PD -94111 AUTOMOTIVE MOSFET IRFBA1405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control VDSS = 55V Power Door Benefits Advanced Process Technology RDS(on) = 5.0m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 174AV 175 C Operating Temperature S Fast Switching Repetitiv

 9.3. Size:211K  international rectifier
 auirfba1405.pdf

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

 9.4. Size:41K  international rectifier
 irfba31n50l.pdf

PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control 500V 0.152 31A UninterruptIble Power Supply Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and

 9.5. Size:41K  international rectifier
 irfba32n50k.pdf

PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.14 32A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo

 9.6. Size:53K  international rectifier
 irfba34n50c.pdf

PD- 93931 PROVISIONAL IRFBA34N50C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.070 40A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-220

 9.7. Size:130K  international rectifier
 irfba22n50apbf.pdf

PD-91886C IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply 500V 0.23 24A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage an

 9.8. Size:216K  international rectifier
 irfba1405ppbf.pdf

PD -95152A IRFBA1405PPbF Typical Applications Industrial Motor Drive HEXFET Power MOSFET D Benefits VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.0m l Dynamic dv/dt Rating G l 175 C Operating Temperature l Fast Switching ID = 174A S l Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFETs uti

 9.9. Size:106K  international rectifier
 irfba22n50a.pdf

PD-91866B IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23 24A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curr

 9.10. Size:48K  international rectifier
 irfba35n60c.pdf

PD - 93800A PROVISIONAL IRFBA35N60C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080 35A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Avalanche Voltage and Current Sup

 9.11. Size:115K  international rectifier
 irfba1404.pdf

PD - 93806 AUTOMOTIVE MOSFET IRFBA1404P Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric Braking D VDSS = 40V Radiator Fan Control Benefits Advanced Process Technology RDS(on) = 3.7m Ultra Low On-Resistance G Increase Current Handling Capability ID = 206A 175 C Operating Temperature S Fast Switchi