IRFH5004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5004
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 73 nC
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 970 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5004
IRFH5004 Datasheet (PDF)
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5006trpbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5007pbf.pdf
PD -95958IRFH5007PbFHEXFET Power MOSFETVDS75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID 100 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m)
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5007pbf.pdf
IRFH5007PbFHEXFET Power MOSFETVDS 75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical) 65 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m) Lower Conduction Losses
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918