IRFH5015 Todos los transistores

 

IRFH5015 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5015

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.7 nS

Cossⓘ - Capacitancia de salida: 205 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm

Encapsulados: PQFN5X6

 Búsqueda de reemplazo de IRFH5015 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFH5015 datasheet

 ..1. Size:272K  international rectifier
 irfh5015pbf.pdf pdf_icon

IRFH5015

IRFH5015PbF HEXFET Power MOSFET VDS 150 V RDS(on) max 31 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 ID PQFN 5X6 mm 44 A (@Tmb = 25 C) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (

 7.1. Size:254K  1
 irfh5010trpbf.pdf pdf_icon

IRFH5015

IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (

 7.2. Size:254K  international rectifier
 irfh5010pbf.pdf pdf_icon

IRFH5015

IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (

 8.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5015

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

MOSTRAR MÁS

Otros transistores... IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , IRFH5006 , IRFH5007 , IRFH5010 , SPP20N60C3 , IRFH5020 , IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 , IRFH5110 , IRFH5204 , IRFH5206 .

 

 

 

 

↑ Back to Top
.