IRFH5015 Todos los transistores

 

IRFH5015 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5015

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 33 nC

Resistencia drenaje-fuente RDS(on): 0.031 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5015 Datasheet (PDF)

1.1. irfh5015pbf.pdf Size:214K _upd-mosfet

IRFH5015
IRFH5015

PD - 97446 IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 33 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 56 A (@Tc(Bottom) = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Low

1.2. irfh5015pbf.pdf Size:285K _international_rectifier

IRFH5015
IRFH5015

IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 44 A (@Tmb = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Lower Conduction Losses Low T

 3.1. irfh5010pbf.pdf Size:301K _upd-mosfet

IRFH5015
IRFH5015

PD -96297 IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses

3.2. irfh5010pbf.pdf Size:279K _international_rectifier

IRFH5015
IRFH5015

PD-96297A IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses L

Otros transistores... IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , IRFH5006 , IRFH5007 , IRFH5010 , BUZ90 , IRFH5020 , IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 , IRFH5110 , IRFH5204 , IRFH5206 .

 

 
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