IRFH5020 Todos los transistores

 

IRFH5020 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5020

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.7 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: PQFN5X6

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IRFH5020 datasheet

 ..1. Size:341K  international rectifier
 irfh5020pbf.pdf pdf_icon

IRFH5020

PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses

 0.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5020

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

 7.1. Size:272K  international rectifier
 irfh5025pbf.pdf pdf_icon

IRFH5020

IRFH5025PbF HEXFET Power MOSFET VDS 250 V RDS(on) max 100 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th

 8.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5020

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

MOSTRAR MÁS

Otros transistores... IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , IRFH5006 , IRFH5007 , IRFH5010 , IRFH5015 , SKD502T , IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 , IRFH5110 , IRFH5204 , IRFH5206 , IRFH5207 .

 

 

 

 

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