IRFH5104 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5104
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 650 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: PQFN5X6
Búsqueda de reemplazo de IRFH5104 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFH5104 datasheet
..1. Size:256K international rectifier
irfh5104pbf.pdf 
IRFH5104PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 3.5 m (@VGS = 10V) Qg (typical) 53 nC RG (typical) 1.4 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 3.5m ) Lower Conductio
7.1. Size:331K international rectifier
irfh5106pbf.pdf
PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 5.6 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.4 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 5.6m )
8.1. Size:250K international rectifier
irfh5110pbf.pdf
IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 12.4 m (@VGS = 10V) Qg (typical) 54 nC RG (typical) 1.5 ID PQFN 5X6 mm 63 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (
9.1. Size:260K 1
irfh5020trpbf.pdf
IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The
9.2. Size:263K 1
irfh5006trpbf.pdf
IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses
9.3. Size:240K 1
irfh5302trpbf.pdf
IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (
9.4. Size:236K 1
irfh5301trpbf.pdf
IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 1.85 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (
9.5. Size:824K 1
irfh5300trpbf.pdf
IRMOSFET IRFH5300PbF VDSS 30 V RDS(on) max 1.4 m (@ VGS = 10V) Qg (typical) 50 nC Rg (typical) 1.3 ID 336 A PQFN 5X6 mm (@TC (Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
9.6. Size:254K 1
irfh5010trpbf.pdf
IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (
9.7. Size:341K international rectifier
irfh5303pbf.pdf
PD -97467 IRFH5303PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 4.2 m (@VGS = 10V) Qg (typical) 15 nC RG (typical) 0.6 ID 82 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Control MOSFET for high frequency buck converters Features and Benefits Benefits Features Low charge (typical 15nC) Lower Switching Losses Low Rg (typical 0.6 ) Lower Switching Losses Low Therm
9.8. Size:210K international rectifier
irfh5210pbf.pdf
PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 14.9 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 14.9m
9.9. Size:272K international rectifier
irfh5300pbf.pdf
PD -97410A IRFH5300PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 1.4 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon ( 1.4m ) Lower Conduction Losses Low The
9.10. Size:254K international rectifier
irfh5010pbf.pdf
IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (
9.11. Size:292K international rectifier
irfh5206pbf.pdf
PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 6.7 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 89 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 7.0m at Vgs=10V) L
9.12. Size:240K international rectifier
irfh5302pbf.pdf
IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (
9.13. Size:261K international rectifier
irfh5250pbf.pdf
IRFH5250PbF HEXFET Power MOSFET VDS 25 V RDS(on) max 1.15 m (@VGS = 10V) Qg (typical) 52 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tmb = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (
9.14. Size:272K international rectifier
irfh5015pbf.pdf
IRFH5015PbF HEXFET Power MOSFET VDS 150 V RDS(on) max 31 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 ID PQFN 5X6 mm 44 A (@Tmb = 25 C) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (
9.15. Size:341K international rectifier
irfh5020pbf.pdf
PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses
9.16. Size:298K international rectifier
irfh5255pbf.pdf
PD -96289 IRFH5255PbF HEXFET Power MOSFET VDS 25 V RDS(on) max 6.0 m (@VGS = 10V) Qg (typical) 7.0 nC RG (typical) 0.6 ID PQFN 5X6 mm 51 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6 ) Lower Switching Losses
9.17. Size:255K international rectifier
irfh5220pbf.pdf
IRFH5220PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 99.9 m (@VGS = 10V) Qg (typical) 20 nC RG (typical) 2.3 ID 20 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses
9.18. Size:340K international rectifier
irfh5304pbf.pdf
PD -97447 IRFH5304PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 4.5 m (@VGS = 10V) Qg (typical) 16 nC ID 79 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC) Lower Switching Losses Low Thermal Resistance to PCB (
9.19. Size:233K international rectifier
irfh5406pbf.pdf
IRFH5406PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 14.4 m (@VGS = 10V) Qg (typical) 21 nC RG (typical) 1.1 ID PQFN 5X6 mm 40 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (
9.20. Size:209K international rectifier
irfh5302.pdf
PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features
9.21. Size:259K international rectifier
irfh5004pbf.pdf
IRFH5004PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 2.6 m (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 2.6m ) Lower Conduction Losses L
9.22. Size:263K international rectifier
irfh5006pbf.pdf
IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses
9.23. Size:292K international rectifier
irfh5250dpbf.pdf
IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS(on) max 1.4 m (@VGS = 10V) VSD max 0.6 V (@IS = 5.0A) trr (typical) 27 ns ID PQFN 5X6 mm 100 A (@Tmb = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (
9.24. Size:236K international rectifier
irfh5301pbf.pdf
IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 1.85 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (
9.25. Size:268K international rectifier
irfh5007pbf.pdf
IRFH5007PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 5.9 m (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 5.9m ) Lower Conduction Losses
9.26. Size:205K international rectifier
irfh5306pbf.pdf
PD - 97429 IRFH5306PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 8.1 m (@VGS = 10V) Qg (typical) 7.8 nC RG (typical) 1.4 ID 44 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 7.8nC) Lower switching losses Low thermal resistance to PCB (
9.27. Size:235K international rectifier
irfh5215pbf.pdf
IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS(on) max 58 m (@VGS = 10V) Qg (typical) 21 nC RG (typical) 2.3 ID PQFN 5X6 mm 27 A (@Tc(Bottom) = 25 C) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (
9.28. Size:241K international rectifier
irfh5302dpbf.pdf
IRFH5302DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.5 m (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (
9.29. Size:272K international rectifier
irfh5025pbf.pdf
IRFH5025PbF HEXFET Power MOSFET VDS 250 V RDS(on) max 100 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th
9.30. Size:252K international rectifier
irfh5204pbf.pdf
IRFH5204PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 4.3 m (@VGS = 10V) Qg (typical) 43 nC RG (typical) 1.7 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (
9.31. Size:300K international rectifier
irfh5207pbf.pdf
PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 9.6 m (@VGS = 10V) Qg (typical) 39 nC RG (typical) 1.7 ID PQFN 5X6 mm 71 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (
9.32. Size:253K international rectifier
irfh5053pbf.pdf
PD - 97359 IRFH5053PbF Applications HEXFET Power MOSFET l 3 Phase Boost Converter Applications VDSS RDS(on) max Qg l Secondary Side Synchronous Rectification 18m 100V @VGS = 10V 24nC Benefits S l Very low RDS(ON) at 10V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l Lead-Free (Qualified up to 260 C R
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