IRFH5106 Todos los transistores

 

IRFH5106 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5106
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: PQFN5X6

 Búsqueda de reemplazo de MOSFET IRFH5106

 

Principales características: IRFH5106

 ..1. Size:331K  international rectifier
irfh5106pbf.pdf pdf_icon

IRFH5106

PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 5.6 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.4 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 5.6m )

 7.1. Size:256K  international rectifier
irfh5104pbf.pdf pdf_icon

IRFH5106

IRFH5104PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 3.5 m (@VGS = 10V) Qg (typical) 53 nC RG (typical) 1.4 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 3.5m ) Lower Conductio

 8.1. Size:250K  international rectifier
irfh5110pbf.pdf pdf_icon

IRFH5106

IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 12.4 m (@VGS = 10V) Qg (typical) 54 nC RG (typical) 1.5 ID PQFN 5X6 mm 63 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (

 9.1. Size:260K  1
irfh5020trpbf.pdf pdf_icon

IRFH5106

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

Otros transistores... IRFH5006 , IRFH5007 , IRFH5010 , IRFH5015 , IRFH5020 , IRFH5025 , IRFH5053 , IRFH5104 , 12N60 , IRFH5110 , IRFH5204 , IRFH5206 , IRFH5207 , IRFH5210 , IRFH5215 , IRFH5220 , IRFH5250 .

 

 
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