IRFH5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5210
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 3.6 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 39 nC
Resistencia drenaje-fuente RDS(on): 0.0149 Ohm
Empaquetado / Estuche: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5210
IRFH5210 Datasheet (PDF)
1.1. irfh5210pbf.pdf 
Size:210K _upd-mosfet
PD - 97490A IRFH5210PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 14.9 mΩ (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 Ω ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (≤ 14.9mΩ
1.2. irfh5210pbf.pdf Size:256K _international_rectifier
IRFH5210PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 14.9 mΩ (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 Ω ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (≤ 14.9mΩ at Vgs = 10V)
3.1. irfh5215pbf.pdf Size:252K _international_rectifier
IRFH5215PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 58 mΩ (@VGS = 10V) Qg (typical) 21 nC RG (typical) 2.3 Ω ID PQFN 5X6 mm 27 A (@Tc(Bottom) = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 58 mΩ) Lower Conduction Lo
Otros transistores... IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 , IRFH5110 , IRFH5204 , IRFH5206 , IRFH5207 , STP75NF75 , IRFH5215 , IRFH5220 , IRFH5250 , IRFH5250D , IRFH5255 , IRFH5300 , IRFH5301 , IRFH5302 .
