IRFH5210 Todos los transistores

PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 14.9 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 14.9m

IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS(on) max 58 m (@VGS = 10V) Qg (typical) 21 nC RG (typical) 2.3 ID PQFN 5X6 mm 27 A (@Tc(Bottom) = 25 C) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (

PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 6.7 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 89 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 7.0m at Vgs=10V) L

IRFH5250PbF HEXFET Power MOSFET VDS 25 V RDS(on) max 1.15 m (@VGS = 10V) Qg (typical) 52 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tmb = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (

PD -96289 IRFH5255PbF HEXFET Power MOSFET VDS 25 V RDS(on) max 6.0 m (@VGS = 10V) Qg (typical) 7.0 nC RG (typical) 0.6 ID PQFN 5X6 mm 51 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6 ) Lower Switching Losses

IRFH5220PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 99.9 m (@VGS = 10V) Qg (typical) 20 nC RG (typical) 2.3 ID 20 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses

IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS(on) max 1.4 m (@VGS = 10V) VSD max 0.6 V (@IS = 5.0A) trr (typical) 27 ns ID PQFN 5X6 mm 100 A (@Tmb = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (

IRFH5204PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 4.3 m (@VGS = 10V) Qg (typical) 43 nC RG (typical) 1.7 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (

PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 9.6 m (@VGS = 10V) Qg (typical) 39 nC RG (typical) 1.7 ID PQFN 5X6 mm 71 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (