IRFH5255 Todos los transistores

 

IRFH5255 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5255

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5255 Datasheet (PDF)

1.1. irfh5255pbf.pdf Size:298K _upd-mosfet

IRFH5255
IRFH5255

PD -96289 IRFH5255PbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 6.0 mΩ (@VGS = 10V) Qg (typical) 7.0 nC RG (typical) 0.6 Ω ID PQFN 5X6 mm 51 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6Ω) Lower Switching Losses

1.2. irfh5255pbf.pdf Size:249K _international_rectifier

IRFH5255
IRFH5255

IRFH5255PbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 6.0 mΩ (@VGS = 10V) Qg (typical) 7.0 nC RG (typical) 0.6 Ω ID PQFN 5X6 mm 51 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6Ω) Lower Switching Losses Low Thermal Re

 3.1. irfh5250pbf.pdf Size:305K _upd-mosfet

IRFH5255
IRFH5255

PD -96265 IRFH5250PbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 1.15 m (@VGS = 10V) Qg (typical) 52 nC RG (typical) 1.3 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (<1.15 mΩ) Lower Conduction Losses Low Th

3.2. irfh5250pbf.pdf Size:306K _international_rectifier

IRFH5255
IRFH5255

PD -96265 IRFH5250PbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 1.15 m (@VGS = 10V) Qg (typical) 52 nC RG (typical) 1.3 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (<1.15 mΩ) Lower Conduction Losses Low Th

 3.3. irfh5250dpbf.pdf Size:261K _international_rectifier

IRFH5255
IRFH5255

IRFH5250DPbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 1.4 mΩ (@VGS = 10V) VSD max 0.6 V (@IS = 5.0A) trr (typical) 27 ns ID PQFN 5X6 mm 100 A (@Tmb = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<1.4mΩ) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltage Lower Swi

Otros transistores... IRFH5204 , IRFH5206 , IRFH5207 , IRFH5210 , IRFH5215 , IRFH5220 , IRFH5250 , IRFH5250D , IRFP4232 , IRFH5300 , IRFH5301 , IRFH5302 , IRFH5302D , IRFH5303 , IRFH5304 , IRFH5306 , IRFH5406 .

 
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