IRFH7921 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7921 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.6 nS
Cossⓘ - Capacitancia de salida: 240 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: PQFN5X6
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IRFH7921 datasheet
irfh7921pbf.pdf
PD - 97335 IRFH7921PbF HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck VDSS RDS(on) max Qg Converter for Applications in Neworking & Computing Systems 8.5m 30V @VGS = 10V 9.3nC l Optimized for Control FET Applications Benefits S l Very low RDS(ON) at 4.5V VGS S D l Low Gate Charge S l Fully Characterized Avalanche Voltage and D G Cur
irfh7914trpbf.pdf
IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-
irfh7934trpbf.pdf
IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L
irfh7914pbf.pdf
IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-
Otros transistores... IRFH5302, IRFH5302D, IRFH5303, IRFH5304, IRFH5306, IRFH5406, IRFH6200, IRFH7914, STF13NM60N, IRFH7932, IRFH7934, IRFH7936, IRFH8318, IRFH8324, IRFH8325, IRFH8330, IRFH8334
Parámetros del MOSFET. Cómo se afectan entre sí.
History: TTX2302 | HPMB84A | 2SK2879-01 | IRFHM830 | NTMS4705NR2G | 2SK2940 | HUF76437S3S
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