IRFH7921 Todos los transistores

 

IRFH7921 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH7921

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.1 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0085 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH7921 Datasheet (PDF)

1.1. irfh7921pbf.pdf Size:254K _upd-mosfet

IRFH7921
IRFH7921

PD - 97335 IRFH7921PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck VDSS RDS(on) max Qg Converter for Applications in Neworking & Computing Systems 8.5m 30V Ω@VGS = 10V 9.3nC l Optimized for Control FET Applications Benefits S l Very low RDS(ON) at 4.5V VGS S D l Low Gate Charge S l Fully Characterized Avalanche Voltage and D G Cur

1.2. irfh7921pbf.pdf Size:300K _international_rectifier

IRFH7921
IRFH7921

IRFH7921PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck VDSS RDS(on) max Qg Converter for Applications in Neworking & Computing Systems 8.5m 30V Ω@VGS = 10V 9.3nC l Optimized for Control FET Applications Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l

 4.1. irfh7914pbf.pdf Size:249K _upd-mosfet

IRFH7921
IRFH7921

PD - 97336 IRFH7914PbF HEXFET® Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V Ω@VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S D l Low Gate Charge S l Fully Characterized Avalanche Voltage and D G Current

4.2. irfh7932pbf.pdf Size:272K _upd-mosfet

IRFH7921
IRFH7921

PD - 96140A IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested

 4.3. irfh7936pbf.pdf Size:266K _upd-mosfet

IRFH7921
IRFH7921

PD -97337A IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m Ω@VGS = 10V 30V 17nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Teste

4.4. irfh7934pbf.pdf Size:310K _upd-mosfet

IRFH7921
IRFH7921

PD -97151 IRFH7934PbF Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power l Control MOSFET for Isolated DC-DC 30V 3.5m @VGS = 10V 20nC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100%

 4.5. irfh7911pbf.pdf Size:525K _upd-mosfet

IRFH7921
IRFH7921

PD - 97427A IRFH7911PbF HEXFET® Power MOSFET Q1 Q2 VDS 30 30 V RDS(on) max 8.6 3.0 m: (@VGS = 10V) Qg (typical) 8.3 34 nC ID 13 28 A (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low char

4.6. irfh7914pbf.pdf Size:300K _international_rectifier

IRFH7921
IRFH7921

IRFH7914PbF HEXFET® Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V Ω@VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

4.7. irfh7932pbf.pdf Size:335K _international_rectifier

IRFH7921
IRFH7921

IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l

4.8. irfh7936pbf.pdf Size:302K _international_rectifier

IRFH7921
IRFH7921

IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m 30V Ω@VGS = 10V 17nC DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified

4.9. irfh7934pbf.pdf Size:274K _international_rectifier

IRFH7921
IRFH7921

IRFH7934PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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