IRFHS8342 Todos los transistores

 

IRFHS8342 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFHS8342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: PQFN2X2

 Búsqueda de reemplazo de IRFHS8342 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFHS8342 datasheet

 ..1. Size:213K  international rectifier
irfhs8342pbf.pdf pdf_icon

IRFHS8342

PD - 97596B IRFHS8342PbF HEXFET Power MOSFET VDS 30 V TOP VIEW VGS max 20 V D D 1 6 D RDS(on) max D 16.0 m G D (@VGS = 10V) D 2 D 5 D Qg(typical) D 4.2 nC D (@VGS = 4.5V) S S G 3 4 S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for Buck Converters System/Load Switch Features and Benefits Features Resulting Benefits

 8.1. Size:231K  international rectifier
irfhs8242pbf.pdf pdf_icon

IRFHS8342

IRFHS8242PbF HEXFET Power MOSFET VDS 25 V TOP VIEW VGS max 20 V D RDS(on) max D 1 6 D D 13.0 m G (@VGS = 10V) D D 2 D 5 D Qg (typical) 4.3 nC D S G 3 4 S D ( @ VGS = 4.5V) S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25 C) Applications System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon ( 13.0m ) Lower Conduction Losses L

 9.1. Size:323K  international rectifier
irfhs9301pbf.pdf pdf_icon

IRFHS8342

PD - 97581A IRFHS9301PbF HEXFET Power MOSFET VDS TOP VIEW -30 V VGS max 20 V D RDS(on) max D 1 6 D D 37 m G D (@VGS = -10V) D 2 D 5 D Qg (typical) 13 nC D D S S ID S G 3 4 S -8.5 A 2mm x 2mm PQFN (@TC = 25 C) Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Benefits Low RDSon ( 37m

 9.2. Size:276K  international rectifier
irfhs9351pbf.pdf pdf_icon

IRFHS8342

IRFHS9351PbF HEXFET Power MOSFET VDS -30 V TOP VIEW VGS max 20 V D1 RDS(on) max S1 1 6 D1 G2 170 m (@VGS = -10V) S2 D1 D1 D2 FET1 G1 2 5 G2 ID -3.4 A S1 (@TC = 25 C) G1 D2 D2 3 4 S2 D2 FET2 2mm x 2mm Dual PQFN Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Benefits Low RDSon ( 17

Otros transistores... IRFH8325 , IRFH8330 , IRFH8334 , IRFH8337 , IRFHM830 , IRFHM830D , IRFHM831 , IRFHS8242 , STP65NF06 , IRFI4110G , IRFI4227 , IRFI4229 , IRFI4321 , IRFI4410Z , IRFI4410ZG , IRFIB41N15D , IRFIZ48V .

History: IRFI4110G

 

 

 


History: IRFI4110G

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E | ASD60R330E | ASD60R280E | ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E

 

 

 

Popular searches

oc71 | njw0302g | 2n3904 transistor equivalent | 2sc2312 | bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent

 

 

↑ Back to Top
.